Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

Okamoto, Yasuhiro; Ando, Yasuhisa; Hataya, K.; Nakayama, Tatsuo; Miyamoto, Hiroyuki; Inoue, Takashi; Senda, M.; Hirata, Koji; Kosaki, Masayoshi; Shibata, Naoki; Kuzuhara, Masaaki

doi:10.1109/tmtt.2004.837159

Cited by 99 publications

(69 citation statements)

References 9 publications

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“…A multi-cell device with a gate width of 48 mm demonstrated a record saturated output power of 230 W with a liner gain of 9.5 dB and a power-added efficiency of 67% at a drain bias of 53 V, as shown in Fig. 8 [9]. To the best of our knowledge, the saturated output power of 230 W is the highest ever achieved for any single-chip FET at 2GHz.…”

Section: Msg/magmentioning

confidence: 79%

“…On the other hand, for the normal FET without an FP electrode, the large difference (22%) in the I-V characteristics was observed between two bias sweeping ranges. Through comparison between various gate structures, we found that the FP electrode is primary importance to suppress major part of current collapse and the additional gate recess process is effective to further minimize the residual current collapse [9]. The latter is thus very important to achieve ideal power operation at high drain-bias voltages.…”

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confidence: 99%

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Performance of AlGaN/GaN heterojunction FETs for microwave power applications

Miyamoto¹

2006

Phys. Status Solidi (c)

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1 Introduction GaN-based FETs are attracting considerable attention for high-voltage microwave power applications such as cellular phone base stations, wireless internet access system and intelligent transport system. This is due to its unique material properties, including a wide bandgap leading to high breakdown fields, a large high-field electron drift velocity leading to high speed, and the existence of polarization effects leading to high sheet charge density that exceeds 10 13 cm -2 . Several demonstrations concerning remarkable high-power operation over 100 W at 2 GHz [1-5] and over 3 W at 30 GHz [6,7] have been reported. In this paper, design and performance of high-frequency and high-voltage AlGaN/GaN heterojunction FETs are described. For high-power operation at L-band and C-band, a novel device design to suppress undesirable current collapse as well as to improve breakdown behavior and gain characteristics is presented. For Ka-band high-power operation, a short-channel device with the improved FET layout configuration is presented.

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Section: Msg/magmentioning

confidence: 79%

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confidence: 99%

Performance of AlGaN/GaN heterojunction FETs for microwave power applications

Miyamoto¹

2006

Phys. Status Solidi (c)

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“…It has to be noted that 0.25 mm devices with a FP-extension of 0.5µm towards the drain contact, i.e. their extension towards the drain is 0.25µm longer than the extension of the top of the T-gates, yield a [1,3,[10][11][12][13]. It can be concluded that we have achieved state-of-the-art results with respect to the generation of large, i.e.…”

Section: Large-periphery Devicesmentioning

confidence: 96%

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

et al. 2008

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We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (W g ) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an optimized process flow comprising a low-power Ar-based plasma after ohmic contact metallization, cleaning of the AlGaN surface prior to the Schottky gate metallization using a diluted ammonia (NH 4 OH) solution, and passivation of the AlGaN surface using a silicon nitride layer deposited by plasma enhanced chemical vapor deposition. We will show that the best RF power performance has been achieved by HEMTs with iron-doped GaN buffer layers (GaN:Fe). Devices with a total gate width of 1 mm yielded a maximum output power of 11.9 W at S-band (2 -4 GHz) under class AB bias conditions (V DS = 40 -60 V, and V GS = -4.65 --4.0 V).

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“…It is well known that the introduction of field plate (like Fig. 1) enhances the power performance of AlGaN/GaN HEMTs [3][4][5]. This is because the introduction of field plate reduces the current collapse [6][7][8], and increases the off-state breakdown voltage [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Analysis of breakdown characteristics in source field‐plate AlGaN/GaN HEMTs

Onodera

Hanawa

Horio

2016

Phys. Status Solidi C

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Two‐dimensional analysis of off‐state breakdown characteristics of source field‐plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field‐plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field‐plate structure is a little lower than that of the gate field‐plate structure when the field‐plate length is short, because the electric field at the drain edge of the gate becomes higher. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

Cited by 99 publications

References 9 publications

Performance of AlGaN/GaN heterojunction FETs for microwave power applications

Performance of AlGaN/GaN heterojunction FETs for microwave power applications

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

Analysis of breakdown characteristics in source field‐plate AlGaN/GaN HEMTs

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