Analysis of breakdown characteristics in source field‐plate AlGaN/GaN HEMTs

Onodera, Hidetoshi; Hanawa, Hideyuki; Horio, K.

doi:10.1002/pssc.201510155

Cited by 4 publications

(6 citation statements)

References 19 publications

(24 reference statements)

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“…However, when the length of the FP reaches a certain length, the electric-field peak does not decrease with the increasing length of the FP [405]. Furthermore, the gate-drain capacitance and switching loos are increased with the GFP length [424].…”

Section: Passivation and Fp Engineeringmentioning

confidence: 95%

“…More seriously, the trapped electrons caused by the virtual gate effect increase dramatically under high-voltage stress, thereby leading to part or full depletion of the 2DEG channel electrons [403,404]. The reduced I DS represents an increase in the dynamic R ON -known as current collapse or R ON dispersion, respectively-and has emerged as a critical issue in high-voltage devices [405]. To suppress current collapse, the introduction of surface passivation combined with a FP has been proposed to reduce the surface state density and modulate distribution of the electric field at the drain edge of the gate (figure 16(b)) [406][407][408].…”

Section: Passivation and Fp Engineeringmentioning

confidence: 99%

“…GaN-based HEMTs with a GFP evidently improved the R ON and V BD . Onodera et al [405] showed that the SFP structure was effective in improving the breakdown voltage. Yu et al [412] fabricated AlGaN/GaN double-gate HEMTs with a SFP and GFP for the first time to demonstrate that the GFP improved dynamic performance more than the SFP owing to the combined effects of positivelyinduced extra electrons and the negative-voltage-modulated peak electric field at the drain-side gate edge.…”

Section: Passivation and Fp Engineeringmentioning

confidence: 99%

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GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Passivation and Fp Engineeringmentioning

confidence: 95%

Section: Passivation and Fp Engineeringmentioning

confidence: 99%

Section: Passivation and Fp Engineeringmentioning

confidence: 99%

See 1 more Smart Citation

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

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“…Hence, to calculate the correct MTTF, one is required to know the channel temperature. However, a direct measurement of the hot spot above the channel near the gate edge where the electric field reaches its maximum [9][10][11][12], is not possible, because this point is concealed by the field plate [5]. Therefore, the only way to obtain this temperature is to estimate it using thermal simulations.…”

Section: Introductionmentioning

confidence: 99%

Fast estimation of channel temperature in GaN high electron mobility transistor under RF operating conditions

Chervonni

Aktushev²,

Ojalvo³

et al. 2018

Semicond. Sci. Technol.

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Working at high RF power leads gallium nitride (GaN) high electron mobility transistors (HEMT) to self-heating that poses a limit to device performances and reliability. Thermal characterization is therefore of great value for proper design of heat dissipation and also for device reliability studies. The peak power dissipation in HEMT devices is located in the channel near the gate edge, which is typically buried under a field plate. This hot spot is thus inaccessible to direct temperature measurement. Therefore, any method used for temperature measurement has to be augmented by a thermal simulation to calculate the actual temperature in the channel from temperature measured elsewhere. In this work, we used thermal imaging to measure temperature during device operation in various pulsed RF conditions. To obtain the hot spot temperature, we developed a thermal simulation of AlGaN/GaN HEMT transistor on SiC substrate. The simulation estimates the channel temperature using 3D finite element method with multi-parameter input. To calibrate the simulation, we compared simulation results with IR images of a 2 mm AlGaN/GaN HEMT transistor operating at various pulsed RF conditions. The simulation is typically slow. In this work, we used the calibrated simulation to study the hot spot temperature as a function of the working conditions and formulated an approximated equation for the thermal behavior of the transistor as a function of power dissipation, base plate temperature, pulse width, and pulse duty cycle that may be used to estimate the channel temperature in real time.

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“…With the excellent ability of these FP techniques to effectively extend the depletion region and replace a single-peak electric field with several peaks, [1] the electric field distribution could be uniformed, the device breakdown performance and other relevant reliability performance, such as trapping effect, [2,3] inverse piezoelectric effect [4,5] could be improved. So far, various studies on the GaN-based HEMTs with different FP structures have been reported, [6][7][8][9][10][11][12][13][14][15][16][17][18] of which it may be one of the important focuses to improve the device breakdown voltage without increasing device dimension. Therefore, it could be concluded, to a great extent, that in order to fabricate a device with high breakdown voltage and little degradation of its other performances, it may be an effective and valuable method to raise the ability of the FP per unit length to enhance the breakdown voltage as much as possible, which deserves to be ex-plored further.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

Mao

Fan

et al. 2016

Chinese Phys. B

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A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.

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Analysis of breakdown characteristics in source field‐plate AlGaN/GaN HEMTs

Cited by 4 publications

References 19 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Fast estimation of channel temperature in GaN high electron mobility transistor under RF operating conditions

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

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