Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jinfeng; Zheng, Xuefeng; Wang, Chong; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue

doi:10.1088/1674-1056/25/12/127305

Cited by 22 publications

(12 citation statements)

References 23 publications

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“…Only when three peaks are uniform and close to 3 MV/cm, could we achieve the highest V BD . Meanwhile, comparing Figure 11a with Figure 11b, the potential lines distribution of the former are more crowded than that of the latter, resulting in a lower V BD [14].…”

Section: Devices Contained With Fp-g Fp-s and Fp-dmentioning

confidence: 97%

“…Moreover, simulations about breakdown performance were all carried out with the gate biased at −6 V, keeping devices on the off-state. Finally, V BD was defined as the drain voltage when the peak electric field in the channel reached 3 MV/cm [10,14,22].…”

Section: Physic Modelsmentioning

confidence: 99%

“…Relevant analytical models [11,12] and reliability improvement [13] were also reported, providing a deeper insight into the relationship between FPs and V BD . In terms of FP-S, a T-shaped FP-S was designed by Mao Wei et al and it attained high V BD and high efficiency remarkably [14]. In order to enhance V BD more effectively, the combination of both FP-G and FP-S is inevitable [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

et al. 2019

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A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

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Section: Devices Contained With Fp-g Fp-s and Fp-dmentioning

confidence: 97%

Section: Physic Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

et al. 2019

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“…1(b) for extracting the electric field distribution by Silvaco simulation. Because the breakdown voltage of the device is closely related to the electric field at the gate edge, and this kind of method had been verified in the state-of-the-art papers [21], [22].…”

Section: Experiments and Simulation Setupmentioning

confidence: 99%

Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

Lei

Wang

Guo

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, the influence of traps on the dynamic on-resistance (R dson ) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a switching power converter with floating buck-boost topology. A new scheme based on the voltage-dependent dynamic R dson is proposed to extract the average activation energy of device degradation. The average activation energy obtained is 2.25 eV at 50-200 V and 2.60 eV at 200-600 V. In addition, the dynamic R dson is accurately extracted by a unique extraction circuit with high switching frequency up to 1 MHz and high off-state voltage up to 600 V. Meanwhile, the switching times at turn-on and turn-off transitions are captured in a floating buck-boost converter, showing that the transconductance decreases with increasing drain voltage. Furthermore, the effect of parasitic output capacitor on the dynamic R dson is investigated by an experimental method. Finally, a proper hard operating mode is proposed to alleviate the influence of the trapping effect on the performance of switching power converters.INDEX TERMS AlGaN/GaN HEMT, activation energy, dynamic on-resistance, switching time.RUI WANG received the B.S. degree from the School of Nanjing University of Posts and Telecommunications in 2017, and is currently pursuing the Ph.D. degree with the School of Electronic Science and Engineering, Nanjing University. Her research interests mainly focus on the relaibilty research of GaN-based power electronic devices, GaN-based power supply design, and so on.

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“…8. The area beneath the contour of each electric field distribution can be used to estimate the BV of each device approximately [14], [31]. As Fig.…”

Section: On-state and Off-state Analysesmentioning

confidence: 99%

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

Zhang

Guo

et al. 2021

IEEE Access

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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

Cited by 22 publications

References 23 publications

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

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