Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

Zhang, Miao; Guo, Zhiyou; Li, Yuan; Ma, Jinpeng; Xia, Xiaoyu; Tan, Xiuyang; Xia, Fanjie; Sun, Hong‐Bo

doi:10.1109/access.2021.3049374

Cited by 14 publications

(5 citation statements)

References 37 publications

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“…[16][17][18] However, the large lattice and thermal mismatches between (Al)GaN and Si (17% and 54%) can lead to a high density of dislocations in the epi-structure, which degrades the crystalline quality and surface smoothness. [19,20] This can limit the photogenerated carriers in the PD devices and significantly reduce the PD performance. Furthermore, to attain the wavelength selectivity of AlGaN/GaN UV PDs, the Al content in the Al x Ga 1-x N is increased to tune the bandgap to a higher value.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

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AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi‐stack HEMTs can reduce photocurrent and degrade device performance. Nano‐structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole‐patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT‐compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology.

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Section: Introductionmentioning

confidence: 99%

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

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“…GaN has the advantages of large band gap, high electron mobility, low on-resistance and adjustable bandwidth, which makes it have broad application prospects in display lighting, 5G communication, power electronics, UV sterilization and other elds [1][2][3][4][5]. Due to the natural high-density two-dimensional electron gas (2DEG) at the AlGaN/GaN heterostructure interface, most of the GaN power devices currently under development are based on horizontal AlGaN/GaN high electron mobility transistors(HEMT).…”

Section: Introductionmentioning

confidence: 99%

Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco

Wang

Lin

Wang

et al. 2023

Preprint

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The C-doped P-gate-enhanced HEMT (PEHEMT) is simulated by using the Silvaco T-CAD tool. The interaction among the C acceptor trap, electron and hole in the buffer layer at different voltages promotes interesting electrical characteristic within the device. In off-state conditions, the peak electric field position shifts from the edge of gate to the edge of drain. During the process of peak electric field transfer, the gate electric field gradually saturates, and the increase rate of peak electric field shows a turning point at 350V (Vd < 600 V). As the voltage further increases (Vd > 600 V), the increase rate of the drain electric field gradually slows down and tends to saturation, and the corresponding saturated gate electric field begins to increase. The uniform, quasi- linear, and step distributions of three different C acceptor in the buffer layer exhibit different degrees of current collapse under 1 ms bias stress, with values of 21.8%, 12.7%, and 12.8%, respectively. In this work, we have provided appropriate explanations for the above phenomena.

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“…In recent years, group-III nitride semiconductors represented by gallium nitride (GaN) have gained wide applications in electronics and optoelectronics, like light-emitting diodes (LEDs), photodetectors (PDs), − lasers diodes, and transistors, since they possess many distinguished characteristics such as a wide band gap (∼3.4 eV), high carrier mobility (∼10 3 cm 2 V –1 s –1 ), and excellent physical and chemical stability . Due to device minimization and integration, low-dimensional GaN nanomaterials in the forms of nanowires (NWs), , nanotubes (NTs), and nanosheets (NSs) with a high surface-to-volume ratio, extraordinary optical absorption, and decent crystal quality exhibit novel photoelectric properties in contrast to their bulk counterparts and are used as building blocks to construct optoelectronic nanodevices.…”

Section: Introductionmentioning

confidence: 99%

GaN Nanowire/Nb-Doped MoS₂ Nanoflake Heterostructures for Fast UV–Visible Photodetectors

Tang

Zheng

Cao

et al. 2022

ACS Appl. Nano Mater.

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gallium nitride (GaN) has been used as building blocks to construct optoelectronic nanodevices because of its properties. However, the slow respond speed and narrow spectral detection range of nano-based devices hardly meet the requirements of high-speed and multifunction component development. Herein, we propose a promising strategy to realize photodetectors (PDs) featuring high responsivity, fast response speed, and a wide spectral response range by constructing GaN nanowire/Nb-doped MoS 2 flake hybrid heterostructures. Thanks to the synergistic effect of GaN and doped MoS 2 , the integrated device exhibits high responsivity for ultraviolet (365 nm) as well as visible (500 nm) light, and the maximum value is 1.7 × 10 2 and 0.34 A/W. For UV detection, the integrated device shows fast response and its rise/fall time is <8/10 ms, which can rival or surpass many 1D nano-based PDs. Further investigation confirms that the type-II band alignment of the GaN/doped MoS 2 heterojunction with a conduction band offset and a valence band offset of 0.19 and 2.09 eV, respectively, contributes to the enhanced photogenerated carrier separation and transfer process. The assembled PDs with broad-spectrum photoresponse and fast response speed have great promise as the next-generation hybrid photodetection devices.

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Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

Cited by 14 publications

References 37 publications

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco

GaN Nanowire/Nb-Doped MoS₂ Nanoflake Heterostructures for Fast UV–Visible Photodetectors

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Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

Cited by 14 publications

References 37 publications

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco

GaN Nanowire/Nb-Doped MoS2 Nanoflake Heterostructures for Fast UV–Visible Photodetectors

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GaN Nanowire/Nb-Doped MoS₂ Nanoflake Heterostructures for Fast UV–Visible Photodetectors