We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T
0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.
Ge microcrystals embedded in SiOZ glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800 "C for 30 min. The average radius of the Ge microcrystals in SiOZ was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes.
We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm2, and the lasing wavelength was about 1.2 µ m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127 K in the temperature range from 25 to 85° C.
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