GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

Abstract

We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T 0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

“…Assuming misfit relaxation by 60 1 2 h101if111g MDs (i.e.cosh = cosk = 1/2) the model gives a critical thickness of d c % 320 nm for the samples A, B, C and D. However, assuming that the MDs are of 1 2 h110if111g pure edge type (i.e.cosh = 0 and cosk = 1), the model yields a significantly smaller critical thickness d c % 160 nm for the same samples.…”

“…Most of the MDs in thin film III-V heteroepitaxy are either pure edge 1 2 h110if111g dislocations or 60 1 2 h101if111g mixed dislocations [14,15]. All of the back-reflection topographs on the film recorded from samples B and D were examined with a microscope for the Burgers vector analysis.…”

“…Metal-organic vapor phase epitaxially (MOVPE) grown GaAsN dilute nitride layers have been examined in the past decade due to the unique effects caused by the addition of nitrogen to the (In)GaAs lattice, see for example Refs. [1] and [2]. In high quality semiconductor devices, especially in those that are heterostructure based, a near-perfect crystal lattice is vital.…”

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

“…Since its proposal by Kondow et al 1 as a material for near-infrared lasers, widespread interest followed and expanded into other optoelectronic devices including high-efficiency multijunction solar cells 2,3 and near-infrared photodetectors. 4,5 Unfortunately, growth of high-quality GaInNAs epilayers remains a challenge due to defects and other problems associated with nitrogen incorporation, the low growth temperature, and/or ion damage from the radiofrequency (RF) plasma source.…”

Defects in Dilute Nitrides

“…The high interest has also been driven by potential technological advantages provided by the novel dilute nitrides in lattice matching to GaAs and Si substrates. A combination of the remarkable fundamental properties with the technological advantages has provided an unprecedented opportunity to tailor material properties for desired device applications in optoelectronics and photonics, such as improved solid-state lasers for fiber-optic communications [2][3][4], multi-junctional solar cells [5,6], integration of efficient III-V optoelectronics with microelectronics based on silicon [7,8].…”