Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Kondow, Masahiko; Uomi, K.; Kitatani, T.; Watahiki, S.; Yazawa, Y.

doi:10.1016/0022-0248(96)00008-5

Cited by 122 publications

(41 citation statements)

References 6 publications

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“…Dilute GaP:N Group III-V dilute nitride semiconductors continue to be in the focus since the 1990's as a material system for longwavelength telecommunication and photovoltaic applications [24,25]. In spite of the fact that nitrides (GaN and AlN) are wide-bandgap semiconductors, addition of a small fraction of nitrogen (a few percent) in the host III-V semiconductors, e.g.…”

Section: Applicationsmentioning

confidence: 99%

Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions

et al. 2014

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Supercells are often used in ab initio calculations to model compound alloys, surfaces and defects. One of the main challenges of supercell electronic structure calculations is to recover the Bloch character of electronic eigenstates perturbed by disorder. Here we apply the spectral weight approach to unfolding the electronic structure of group III-V and II-VI semiconductor solid solutions. The illustrative examples include: formation of donor-like states in dilute Ga(PN) and associated enhancement of its optical activity, direct observation of the valence band anticrossing in dilute GaAs:Bi, and a topological band crossover in ternary (HgCd)Te alloy accompanied by emergence of high-mobility Kane fermions. The analysis facilitates interpretation of optical and transport characteristics of alloys that are otherwise ambiguous in traditional first-principles supercell calculations.

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Section: Applicationsmentioning

confidence: 99%

Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions

et al. 2014

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“…The IRSE parameters Ψ and ∆ are defined by the complex ratio of the p -and s -polarized reflectance coefficients r p and r s , respectively [13] , (1) and depend on the angle of incidence Φ a , the thickness d of each layer, and the dielectric functions ε j of all materials from the heterostructure. Ellipsometry is an indirect technique and model calculations are needed to extract information from individual constituents.…”

Section: Ellipsometrymentioning

confidence: 99%

“…The large field of possible optoelectronic applications includes optical interconnections, fast switching systems, and low-band-gap detectors [1]. The large chemical and size differences between N and As causes strongly nonlinear dependence of the band-gap on the composition in this alloy system, and anomalously large optical bowing coefficients have been predicted [2], [3].…”

Section: Introductionmentioning

confidence: 99%

Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

Šik

Schubert

Hofmann³

et al. 2000

MRS Internet j. nitride semicond. res.

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The infrared-optical properties of GaAs/GaN x As 1 -x superlattice (SL) heterostructures (0 < x < 3.3%) are studied by variable angle-of-incidence infrared spectroscopic ellipsometry (IRSE) for wavenumbers from 250 cm -1 to 700 cm -1 . The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm -1 . For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm -1 in the GaN x As 1 -x SL sublayers with a polar strength that increases linearly with x , and which can be used to monitor the nitrogen concentration in GaN x As 1 -x .

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“…One of the major issues in current studies of GaInNAs is the metastability of the material. To overcome the rather low solubility of N in GaAs or GaInAs, non-equilibrium growth conditions are required, which can be realized only by molecular-beam epitaxy (MBE) Kitatani et al (1999); Kondow et al (1996) or metal-organic vapour phase epitaxy (MOVPE) Ougazazaden et al (1997); Saito et al (1998). Growing off thermal equilibrium implies a certain degree of metastability.…”

Section: Introductionmentioning

confidence: 99%

SPSLs and Dilute-Nitride Optoelectronic Devices

Jalili¹

2011

Optoelectronics - Devices and Applications

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Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Cited by 122 publications

References 6 publications

Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions

Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions

Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

SPSLs and Dilute-Nitride Optoelectronic Devices

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