GaInNAs: a novel material for long-wavelength semiconductor lasers

Kondow, Masahiko; Kitatani, T.; Nakatsuka, Shin‐ichi; Larson, M.C.; Nakahara, K.; Yazawa, Y.; Okai, M.; Uomi, K.

doi:10.1109/2944.640627

Cited by 482 publications

(222 citation statements)

References 26 publications

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“…[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] In this article, we show that the effect of nitrogen on the electronic band structure of dilute nitrides can be consistently described in terms of an anti-crossing interaction between localized nitrogen states and the extended conduction-band states of the semiconductor matrix. 6,27 The interaction leads to a significant modification of the band structure of the dilute III-N-V alloys.…”

Section: Introductionmentioning

confidence: 99%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states.The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

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Section: Introductionmentioning

confidence: 99%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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“…Introduction: In the past decade, GaInNAs vertical cavity and edgeemitting laser diodes have been used for 1.3 mm emission with promising results [1]. Although early efforts at wavelengths suitable for long-haul fibre transmission yielded devices with very high laser threshold currents [2,3], the most recent devices have had more reasonable characteristics.…”

Section: Nrc Publications Archive Archives Des Publications Du Cnrcmentioning

confidence: 99%

“…Barrios, X. Zhang, G. Pakulski and X. Wu GaInNAsSb=GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm À2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.Introduction: In the past decade, GaInNAs vertical cavity and edgeemitting laser diodes have been used for 1.3 mm emission with promising results [1]. Although early efforts at wavelengths suitable for long-haul fibre transmission yielded devices with very high laser threshold currents [2,3], the most recent devices have had more reasonable characteristics.…”

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confidence: 99%

1.53 [micro sign]m GaInNAsSb laser diodes grown on GaAs(100)

et al. 2005

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at 1.53µm GaInNAsSb laser diodes grown on GaAs(100) Gupta, J. A.; Barrios, P. J.; Zhang, X.; Pakulski, G.; Wu, X.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744533&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744533&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10. 1049/el:20057623 Electronics Letters, 41, 2, pp. 71-72, 2005-01-20 1.53 m GaInNAsSb laser diodes grown on GaAs(100) J.A. Gupta, P.J. Barrios, X. Zhang, G. Pakulski and X. Wu GaInNAsSb=GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm À2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.Introduction: In the past decade, GaInNAs vertical cavity and edgeemitting laser diodes have been used for 1.3 mm emission with promising results [1]. Although early efforts at wavelengths suitable for long-haul fibre transmission yielded devices with very high laser threshold currents [2,3], the most recent devices have had more reasonable characteristics. These latest devices have used GaInNAs [4] or GaInNAsSb [5,6] active regions, producing emission in the 1.5 mmr a n g e .In this Letter we present results of GaInNAsSb=GaNAs double quantum well lasers with record lasing wavelength of 1532 nm. The structures were grown by molecular beam epitaxy (MBE) using a novel method of Ar gas dilution...

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“…A possible cause for current suppression in forward I-V is trapping of charge in the potential notch resulting from discontinuity in the CB or valence band (VB) in a heterojunction. 18 The GaAs/GaInNAs band alignment is known to be of type I, 19 and band discontinuities at the n-GaInNAs/n-GaAs and p-GaInNAs/ p-GaAs heterointerfaces would result in a potential spike/notch in the CB and VB, respectively. However, the bandgap and hence band discontinuities are not expected to differ significantly between the as-grown and annealed samples.…”

Section: Improved Optoelectronic Properties Of Rapid Thermally Annealmentioning

confidence: 99%

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Tan

Hunter

Zhang

et al. 2012

Journal of Elec Materi

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We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonoptimally grown GaInNAs p + -i-n + structures, with nominal compositions of 10% In and 3.8% N, can be improved significantly by the RTA treatment to match that of optimally grown structures. The optimally annealed devices exhibit overall improvement in optical and electrical characteristics, including increased photoluminescence brightness, reduced density of deep-level traps, reduced series resistance resulting from the GaAs/GaInNAs heterointerface, lower dark current, and significantly lower background doping density, all of which can be attributed to the reduced structural disorder in the GaInNAs alloy.

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GaInNAs: a novel material for long-wavelength semiconductor lasers

Cited by 482 publications

References 26 publications

Band anticrossing in dilute nitrides

Band anticrossing in dilute nitrides

1.53 [micro sign]m GaInNAsSb laser diodes grown on GaAs(100)

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

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