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NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10. 1049/el:20057623 Electronics Letters, 41, 2, pp. 71-72, 2005-01-20 1.53 m GaInNAsSb laser diodes grown on GaAs(100) J.A. Gupta, P.J. Barrios, X. Zhang, G. Pakulski and X. Wu GaInNAsSb=GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm À2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.Introduction: In the past decade, GaInNAs vertical cavity and edgeemitting laser diodes have been used for 1.3 mm emission with promising results [1]. Although early efforts at wavelengths suitable for long-haul fibre transmission yielded devices with very high laser threshold currents [2,3], the most recent devices have had more reasonable characteristics. These latest devices have used GaInNAs [4] or GaInNAsSb [5,6] active regions, producing emission in the 1.5 mmr a n g e .In this Letter we present results of GaInNAsSb=GaNAs double quantum well lasers with record lasing wavelength of 1532 nm. The structures were grown by molecular beam epitaxy (MBE) using a novel method of Ar gas dilution...