Room-Temperature Pulsed Operation of GaInNAs Laser Diodes     with Excellent High-Temperature Performance

Kondow, Masahiko; Nakatsuka, Shin‐ichi; Kitatani, T.; Yazawa, Y.; Okai, M.

doi:10.1143/jjap.35.5711

Cited by 173 publications

(57 citation statements)

References 3 publications

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“…Recently, the In.GalAslyNy material system has gained attention for use in optoelectronic devices [1,2,3]. The In and N mole fractions in this quaternary system can be chosen to maintain a lattice matching condition to GaAs while achieving a -IeV bandgap, which is of interest for increasing the efficiency of tandem solar cells by using In.Ga-_,AsI yNy as the third layer in a standard GaAs/Gao.5Ino.…”

Section: Introductionmentioning

confidence: 99%

Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

et al. 2001

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The incorporation of a high percentage of nitrogen in the GaAs lattice has been the subject of recent interest to reduce the bandgap while maintaining the nearly lattice matched condition to GaAs. We will report on the metalorganic chemical vapor deposition (MOCVD) of GaAsN using trimethylgallium (TMG), tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy) organometallic sources in a hydrogen-free carrier gas. A nitrogen concentration as high as -8% in GaAsN was achieved. The effect of nitrogen concentration on the structural, optical and surface properties of GaAsN films will be discussed.

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Section: Introductionmentioning

confidence: 99%

Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

et al. 2001

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“…GaAs 1−x N x alloys have attracted much attention of both experimentalists and theoreticians due to their unusual physical properties. Among those features, observed in the typical nitrogen concentration regime of 0.5%-3.0%, one should mention the anomalous band gap reduction, which makes this system technologically important for such electronic devices as infrared diode lasers [1] and multijunction solar cells [2]. Another striking feature of this system is the appearance of a new composition-dependent optical transition, called E + , detected by electro-reflectance measurements for the samples with nitrogen concentrations of ≥0.8% [3,4].…”

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Experimental and theoretical studies of theE+optical transition inGaAsNalloys

et al. 2006

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Optical properties of GaAsN system with nitrogen concentrations in the range of 0.9-3.7% are studied by full-potential LAPW method in a supercell approach. The E+ transition is identified by calculating the imaginary part of the dielectric function. The evolution of the energy of this transition with nitrogen concentration is studied and the origin of this transition is identified by analyzing the contributions to the dielectric function from different band combinations. The L1c-derived states are shown to play an important role in the formation of the E+ transition, which was also suggested by recent experiments. At the same time the nitrogen-induced modification of the first conduction band of the host compound are also found to contribute significantly to the E+ transition. Further, the study of several model supercells demonstrated the significant influence of the nitrogen potential on the optical properties of the GaAsN system. GaAs 1−x N x alloys have attracted much attention of both experimentalists and theoreticians due to their unusual physical properties. Among those features, observed in the typical nitrogen concentration regime of 0.5%-3.0%, one should mention the anomalous band gap reduction, which makes this system technologically important for such electronic devices as infrared diode lasers [1] and multijunction solar cells [2]. Another striking feature of this system is the appearance of a new composition-dependent optical transition, called E + , detected by electro-reflectance measurements for the samples with nitrogen concentrations of ≥0.8% [3,4]. This peak is located at about 0.4-0.8 eV above the conduction band (CB) minimum (denoted as E − ) and shifts upward in energy with increase of nitrogen concentration [3,4,5].Several physical mechanisms have been proposed to describe these nitrogen-induced changes : two-level band anticrossing (BAC) model [6,7], disorder-allowed Γ-X-L coupling [8,9], and the formation of the impurity band [10]. In the frames of the BAC model the E + state naturally appears as the high-energy solution of a two-state Hamiltonian, describing the interaction of the localized nitrogen state with the extended CB states of the host matrix compound [11]. However, the firstprinciples [8,12,13,14] as well as empirical pseudopotential [9,15,16] calculations failed to validate the BAC model. On the other hand, based on these calculations, the intraband coupling model has been proposed. In this model the E + peak is caused by a disorder-allowed transition from the valence band (VB) maximum to the Lpoint of the conduction band. In particular, it was proposed that the energy position of the E + transition is a configuration-weighted average of a nitrogen impurity state and CB L-state, denoted as L 1c [9]. However, to our knowledge, there are no studies of the GaAsN system, which identify and clarify the origin of the E + transition based on direct first-principles calculations of the optical properties of this system.In this Letter we report the results of theoretical study of the...

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“…Recently, GaNAs and GaInNAs have been popularly investigated as new material systems for long wavelength devices fabricated on GaAs substrates such as lasers emitting at the optical-fiber communication wavelength window (1.3-1.55 mm). The application of GaInNAs in the active region should result in lasers with a high characteristic temperature T 0 , and GaInNAs lasers with high characteristic T 0 have already been realized [1,2]. For multi-junction GaInP 2 /GaAs/GaInNAs/Ge solar cells, GaInNAs can be lattice matched to GaAs and tuned in its bandgap to around 1.0 eV, which is an optimized bandgap to achieve the highest efficiencies [3][4][5].…”

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Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF‐Molecular Beam Epitaxy

Ohmae

Matsumoto

Kawabe

et al. 2002

phys. stat. sol. (c)

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PACS : 71.55.Eq; 78.66.Fd; 81.15.Hi; 82.70.Uv In this work, we have investigated the effect of atomic H irradiation on the thin-film growth of GaNAs and GaInNAs by RF-molecular beam epitaxy from the viewpoint of growth dynamics and crystal quality. The crystal quality of Ga(In)NAs was mainly characterized by X-ray diffraction and the surface morphology was characterized by using atomic force microscope. The atomic H irradiation during the growth of GaNAs and GaInNAs in RF-molecular beam epitaxy was found to be effective in improving the overall quality of these epilayers. Further, it was found that atomic H irradiation has an effect of suppressing the three-dimensional growth thereby promoting a twodimensional growth as well as is effective in passivating the defects and suppressing the phase separation. These results should bring further improvements of novel structures that require abrupt interfaces in GaNAs and GaInNAs based devices.Introduction GaNAs and GaInNAs are the representative III-V-N semiconductors, which have strongly sublinear bandgap energy dependence between GaAs and GaN with a much larger alloy bandgap bowing parameter than for any other ternary semiconductors. Recently, GaNAs and GaInNAs have been popularly investigated as new material systems for long wavelength devices fabricated on GaAs substrates such as lasers emitting at the optical-fiber communication wavelength window (1.3-1.55 mm). The application of GaInNAs in the active region should result in lasers with a high characteristic temperature T 0 , and GaInNAs lasers with high characteristic T 0 have already been realized [1,2]. For multi-junction GaInP 2 /GaAs/GaInNAs/Ge solar cells, GaInNAs can be lattice matched to GaAs and tuned in its bandgap to around 1.0 eV, which is an optimized bandgap to achieve the highest efficiencies [3][4][5]. However, in comparison the optical quality of GaInNAs is generally inferior to that of conventional III-V semiconductor materials without N, such as InGaAs. At higher N concentrations which exhibit a strong red shift, the crystal quality of Ga(In)NAs is degraded, but the physical origin of which is not fully understood. The hydrogen species are thought to cause a quenching of PL intensity in as-grown GaInNAs since a large amount of hydrogen are incorporated in gas-source molecular beam epitaxy (GS-MBE) [6], metal organic chemical vapor deposition (MOCVD) [7], and chemical beam epitaxy (CBE) [8,9].In this work, we show that irradiation of atomic H during the growth of GaNAs and GaInNAs in RF-molecular beam epitaxy (MBE) improves the quality of these materials. We have previously shown that the irradiation of atomic H during GaAs [10], and GaN [11] growths in MBE significantly improves the crystal quality of the films. As a continuing effort, we have investigated the effects of atomic H irradiation on growth dynamics and crystal quality.

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Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

Cited by 173 publications

References 3 publications

Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

Experimental and theoretical studies of theE+optical transition inGaAsNalloys

Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF‐Molecular Beam Epitaxy

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