Abstuact-Measurements of alpha-particle-induced charge are carried out for the first time on both conventional MESFET's fabricated directly on semi-insulating GaAs substrates and MESFET's with a buried p-layer. The maximum collected charge is found to be 65 fC in the MESFET's with a buried p-layer, one order smaller than in conventional MESFET's.
The effective lowering of the Schottky barrier height in In0.52Al0.48As diodes under reverse bias conditions is investigated by fitting experimental reverse-bias I-T relationships to the thermionic-field emission theory. This lowering can be explained by thermionic-field emission without assuming a lack of Fermi level pinning. The electron effective mass deduced experimentally from the fitting procedure ranges from 0.072m0 to 0.087m0, which is comparable to the published data. The effective barrier height is largely dependent on the temperature range of the current. The amount of the lowering is dependent on the electron effective mass, but not on the zero-field Schottky barrier height.
Pre-heated ingot was upset along the solidification direction until cracks occurred on the ingot surface, and the forging limit in upsetting and reduction in height at the initiation of cracking was measured.
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