Effect of thermionic-field emission on effective barrier height lowering in In0.52Al0.48As Schottky diodes

Abstract

The effective lowering of the Schottky barrier height in In0.52Al0.48As diodes under reverse bias conditions is investigated by fitting experimental reverse-bias I-T relationships to the thermionic-field emission theory. This lowering can be explained by thermionic-field emission without assuming a lack of Fermi level pinning. The electron effective mass deduced experimentally from the fitting procedure ranges from 0.072m0 to 0.087m0, which is comparable to the published data. The effective barrier height is largely dependent on the temperature range of the current. The amount of the lowering is dependent on the electron effective mass, but not on the zero-field Schottky barrier height.

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

“…An effective SB-lowering (e.g., Dϕ BS ) approximation is used to account for changes in the SB width (W S ) and, hence, the degree of the quantum mechanical tunneling (fig. S5C) (23).…”

An Ultralow Power Mixed Dimensional Heterojunction Transistor Based on the Charge Plasma pn Junction

“…The variation of the on-current in Figure 3b with respect to V S could be understood as charge transport across the heterojunction. The WS 2 /p ++ -Si junction, while being a junction of semiconductors only, could be approximated as a metal-semiconductor Schottky barrier [34] (Figure 4a, inset). To account for the on current dependence on the V S in the transconductance measurement, the current passing the pn homojunction and the Schottky heterojunction thermally and arriving at the CB of Si, could be described by a following equation [35]…”

“…The variation of the on‐current in Figure 3b with respect to V S could be understood as charge transport across the heterojunction. The WS 2 /p ++ ‐Si junction, while being a junction of semiconductors only, could be approximated as a metal‐semiconductor Schottky barrier [ 34 ] ( Figure a, inset). To account for the on current dependence on the V S in the transconductance measurement, the current passing the pn homojunction and the Schottky heterojunction thermally and arriving at the CB of Si, could be described by a following equation [ 35 ] $$\[ \begin{array}{*{20}{c}}{I\left( {{V_{\rm{G}}},{V_{\rm{S}}}} \right) = {I_0}\left( {{e^{V_{\rm{G}}^ * {\rm{/}}\left( {s{V_{\rm{T}}}} \right)}} - 1} \right){e^{ - {\Phi _{\rm{B}}}/{V_{\rm{T}}}}}\left( {{e^{({E_{{\rm{Fn}}}} - {E_{{\rm{F}},{\rm{Si}}}})/{V_{\rm{T}}}}} - 1} \right)}\end{array} \]$$where I 0 is the off‐current, $$V_{\rm{G}}^ * $$ is the gate voltage increase required to raise the current from noise to the saturation level, s is a gate field reduction factor (see Text S6 for an explanation of $$V_{\rm{G}}^ * $$ and s , Supporting Information), V T is the thermal voltage, Φ B is the Schottky barrier height, and E Fn is the quasi‐Fermi level in the region II against the Fermi level in the silicon.…”

Subthreshold Schottky-contacted carbon nanotube network film field-effect transistors for ultralow-power electronic applications

“…More holes could be injected into the channel across the source SB with increasing V GS negatively (from 0.1 to -0.3 V) because the SB width is reduced, leading to a large I DS . The change in the SB width could be equivalent to the change in the effective SB height F q eff [62]. From the reverse-biased current saturation region (i.e.…”