Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face Al x Ga 1Ϫx N/GaN/Al x Ga 1Ϫx N and N-face GaN/Al x Ga 1Ϫx N/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15ϽxϽ0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6ϫ10 12 to 2ϫ10 13 cm Ϫ2 in the GaN channel with increasing Al-concentration from xϭ0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N-and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by piezoelectric and spontaneous polarization effects.

The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular beam epitaxy have been characterized by optical absorption, photoluminescence, and photo-modulated reflectance techniques. All these three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.Electronic Mail: w_walukiewicz@lbl.gov

Two dimensional electron gases in AlxGa1−xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical properties for undoped and silicon doped transistor structures by a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance–voltage profiling measurements. The polarization induced sheet charge bound at the AlGaN/GaN interfaces was calculated from different sets of piezoelectric constants available in the literature. The sheet carrier concentration induced by polarization charges was determined self-consistently from a coupled Schrödinger and Poisson equation solver for pseudomorphically and partially relaxed barriers with different alloy compositions. By comparison of theoretical and experimental results, we demonstrate that the formation of two dimensional electron gases in undoped and doped AlGaN/GaN structures rely both on piezoelectric and spontaneous polarization induced effects. In addition, mechanisms reducing the sheet carrier concentrations like nonabrupt interfaces, dislocations, and the possible influence of surface states on the two dimensional electron gases will be discussed briefly.

High-quality wurtzite-structured In-rich In1−xGaxN films (0⩽x⩽0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In1−xGaxN alloys is well fit with a bowing parameter of ∼1.4 eV. The direct band gap of the In1−xGaxN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet.

High-efficiency multijunction or tandem solar cells based on group III–V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy radiation damage is an essential feature of such cells as they power most satellites, including those used for communications, defense, and scientific research. Recently we have shown that the energy gap of In1−xGaxN alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a full-solar-spectrum material system for multijunction solar cells. We find that the optical and electronic properties of these alloys exhibit a much higher resistance to high-energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications. The observed insensitivity of the semiconductor characteristics to the radiation damage is explained by the location of the band edges relative to the average dangling bond defect energy represented by the Fermi level stabilization energy in In1−xGaxN alloys.