Effects of a buried p-layer on alpha-particle immunity of MESFET's fabricated on semi-insulating GaAs substrates

Umemoto, Y.; Masuda, Naoyuki; Mitsusada, K.

doi:10.1109/edl.1986.26412

Cited by 23 publications

(5 citation statements)

References 8 publications

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“…Assuming that the incident beam enters the crystal at an incident angle of O", the penetration depth of the 2.0 and the 5. 4 MeV beam would be 5.4 and 20.4 pm, respectively. Fig.…”

Section: I-u and C-u Measurementsmentioning

confidence: 99%

“…Hopkins and Srour [3] reported for the first time on the measurement of a-particle induced charge in Schottky diodes fabricated on n-type GaAs. Umemoto et al [4] reported the influence of a-particle induced damage on the performance of metal-semiconductor field-effect transistors (MESFETs) fabricated on semiinsulating GaAs, whereas Zardas et al [5] investigated the dependence of the current-voltage (I-U) characteristics of GaAs MESFETs on temperature and a-particle irradiation. It has been well known for decades that, in principle, it is possible to dope gallium arsenide with impurities resulting from nuclear reactions based on thermal neutrons, y-rays, and charged particles.…”

Section: Introductionmentioning

confidence: 99%

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Electrical and defect characterization of n-Type GaAs irradiated with α-particles using a van de graaff accelerator and an Am-241 radio-nuclide source

Goodman

Auret

Hayes

et al. 1993

Phys. Stat. Sol. (a)

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Radiation damage effects are studied in OMVPE n‐GaAs for a wide range of alpha (α) particle fluences, using an americium‐241 (Am‐241) radio‐nuclide and a linear van de Graaff accelerator as the particle sources. The samples are irradiated at 300 K, after fabricating palladium Schottky barrier diodes (SBDs) on the 1.2 × 1016 cm−3 Si doped epitaxial layers. The radiation induced defects are characterized using conventional deep level transient spectroscopy (DLTS). A correlation is made between the change in SBD characteristics and the quantity and type of defects introduced during α‐particle irradiation. It is shown that the two parameters most susceptible to this irradiation are the reverse leakage current of the SBDs and the free carrier density of the epilayer. The introduction rate and the “signatures” of the α‐particle irradiation induced defects are calculated and compared to those of similar defects introduced during electron irradiation.

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“…Assuming that the incident beam enters the crystal at an incident angle of O", the penetration depth of the 2.0 and the 5. 4 MeV beam would be 5.4 and 20.4 pm, respectively. Fig.…”

Section: I-u and C-u Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical and defect characterization of n-Type GaAs irradiated with α-particles using a van de graaff accelerator and an Am-241 radio-nuclide source

Goodman

Auret

Hayes

et al. 1993

Phys. Stat. Sol. (a)

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show abstract

“…Hopkins and Srour [3] reported for the first time on the measurement of alpha-particle-induced charge in Schottky diodes fabricated on n-type GaAs. Umemoto et al [4] reported on the influence of alpha-particleinduced damage on the performance of Metal Semiconductor Field-Effect Transistors (MESFETs). It has been well known that, in principle, it is possible to dope GaAs with impurities resulting from nuclear reactions based on thermal neutrons, gamma-rays and charged particles.…”

mentioning

confidence: 99%

Defect annealing of alpha-particle irradiated n-GaAs

1994

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“…Device technology techniques, such as buffer layers, or p-implants, can be used to reduce the effects of funneling, and decrease collection volume dimensions [130,131]. Circuit hardening techniques use additional circuit elements to isolate hit nodes from information storage nodes.…”

Section: Hardening Techniquesmentioning

confidence: 99%