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This paper describes novel MEMS probe card device, which is composed of silicon (Si) cantilever beams actuated by titanium-nickel (Ti-Ni) shape memory alloy (SMA) films. Since Ti-Ni SMA film can yield a higher work output per unit volume, Ti-Ni film-actuated Si cantilever beam is expected to be a MEMS probe card device providing large contact force between probe and electrode pad. The developed cantilever beam produces a contact force by not only cantilever bending in contact but also the shape memory effect (SME) of Ti-Ni film arising from Joule’s heating. The SME of Ti-Ni film containing Ti of 50.5 atomic (at.) % to 53.2 at. % can generate an additional contact force of 200 μN on average under applying an electric power of 500 mW to the film. Ti-Ni film-actuated Si cantilever beam would be a key element for successful MEMS probe card with larger contact force and smaller size.

This paper describes design and fabrication of a Ti-Ni shape-memory alloy (SMA) film-actuated single crystal silicon (SCS) multi-probe device utilized for scanning probe nano-lithography (SPNL). This research focuses on the development of the device that can realize fabrication of a nanoscale mask pattern on a few millimeters square area. The designed device consists of Ti-Ni SMA film-actuated 8�8 writing-probes with an Au film-coated tip, and 2�2 tilt-adjustment probes with a piezo-resistive sensor. The SMA actuation mechanism yields a contact or non-contact state between a probe-tip and a sample surface, which indicates that SPNL turns on or off. The tilt-adjustment system can make a spacing between the device and a wafer constant. We have succeeded in fabricating the SPNL multi-probe array device, which has the potential for realization of accurate mask patterning on a few millimeters square area.

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