Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p + -region. Simulation results of 2D electric field and impact ionization rate profile, currentvoltage, capacitance-voltage and bandwidth-gain characteristics are discussed.
The high-speed InGaAs/InP p-i-n photodiodes for microwave generation and frequency up-conversion in microwave and millimeter-wave systems is discussed. Based on numerical simulation study of maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/ InP partially depleted absorber photodiodes in frequency range from 10 to 60 GHz are presented. The design and operation regime peculiarities of InGaAs/InP p-i-n photodiode as optoelectronic up-converter in radio-over-fiber system are provided.
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