High-speed photodiodes for microwave and millimeter-wave systems

Abstract

The high-speed InGaAs/InP p-i-n photodiodes for microwave generation and frequency up-conversion in microwave and millimeter-wave systems is discussed. Based on numerical simulation study of maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/ InP partially depleted absorber photodiodes in frequency range from 10 to 60 GHz are presented. The design and operation regime peculiarities of InGaAs/InP p-i-n photodiode as optoelectronic up-converter in radio-over-fiber system are provided.