“…1. Photodiode structure consists of 1.3 µm thick p + -region #1 with doping concentration of 5 × 10 18 cm −3 , formed in 1.6 µm thick i-InP separation layer #2, p-InP charge sheet #3, 0.6 µm thick i-InP multiplication layer #4, n-InGaAsP charge sheet #5, i-InGaAs absorption layer #6, and n + -InP substrate #7 with doping concentration of 2.5 × 10 18 cm −3 (Malyshev et al 2007(Malyshev et al , 2008. Outer diameter of the modeling structure (die diameter) is 300 µm, while diameter of the p + -region #1 equals to 50, 100, or 150 µm.…”