2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings

Малышев, С. А.; Chizh, A.; Vasileuski, Y.G.

doi:10.1109/nusod.2008.4668252

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…1. Photodiode structure consists of 1.3 µm thick p + -region #1 with doping concentration of 5 × 10 18 cm −3 , formed in 1.6 µm thick i-InP separation layer #2, p-InP charge sheet #3, 0.6 µm thick i-InP multiplication layer #4, n-InGaAsP charge sheet #5, i-InGaAs absorption layer #6, and n + -InP substrate #7 with doping concentration of 2.5 × 10 18 cm −3 (Malyshev et al 2007(Malyshev et al , 2008. Outer diameter of the modeling structure (die diameter) is 300 µm, while diameter of the p + -region #1 equals to 50, 100, or 150 µm.…”

Section: Design Considerationsmentioning

confidence: 99%

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

2008

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Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p + -region. Simulation results of 2D electric field and impact ionization rate profile, currentvoltage, capacitance-voltage and bandwidth-gain characteristics are discussed.

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Section: Design Considerationsmentioning

confidence: 99%

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

2008

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Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector

Marks

Menyuk

et al. 2014

J. Lightwave Technol.

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Abstract-Nonlinearity in p-i-n photodetectors leads to power generation at harmonics of the input frequency, limiting the performance of RF-photonic systems. We use one-dimensional and two-dimensional simulations of the drift-diffusion equations to determine the physical origin of the saturation in a simple heterojunction p-i-n photodetector at room temperature. Incomplete ionization, external loading, impact ionization, and the Franz-Keldysh effect are all included in the model. Impact ionization is the main source of nonlinearity at large reverse bias (>10 V in the device that we simulated). The electron and hole current contributions to the second harmonic power were calculated. We find that impact ionization has a greater effect on the electrons than it does on the holes. We also find that the hole velocity saturates slowly with increasing reverse bias, and the hole current makes a large contribution to the harmonic power at 10 V. This result implies that decreasing the hole injection will decrease the harmonic power.Index Terms-2D simulation, impact ionization, nonlinearity, p-i-n photodetector.

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Sources of nonlinearity in a PIN photodetector at high applied reverse bias

Menyuk

Urick

et al. 2013

2013 IEEE International Topical Meeting on Microwave Photonics (MWP)

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2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings

Cited by 3 publications

References 6 publications

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector

Sources of nonlinearity in a PIN photodetector at high applied reverse bias

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