Sources of nonlinearity in a PIN photodetector at high applied reverse bias

Hu, Yue; Menyuk, Curtis R.; Urick, Vincent J.; Williams, K.J.

doi:10.1109/mwp.2013.6724076

Cited by 4 publications

(6 citation statements)

References 18 publications

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“…To model the carrier transport in the photodetector, we use both 1D and 2D drift-diffusion models [4], [5], [12], [15]- [21]. This model consists of three equations that govern the dynamics of the electron density n, the hole density p, and the electric field E (gradient of the electrostatic potential, ϕ),…”

Section: B Basic Drift-diffusion Modelmentioning

confidence: 99%

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Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector

Marks

Menyuk

et al. 2014

J. Lightwave Technol.

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Abstract-Nonlinearity in p-i-n photodetectors leads to power generation at harmonics of the input frequency, limiting the performance of RF-photonic systems. We use one-dimensional and two-dimensional simulations of the drift-diffusion equations to determine the physical origin of the saturation in a simple heterojunction p-i-n photodetector at room temperature. Incomplete ionization, external loading, impact ionization, and the Franz-Keldysh effect are all included in the model. Impact ionization is the main source of nonlinearity at large reverse bias (>10 V in the device that we simulated). The electron and hole current contributions to the second harmonic power were calculated. We find that impact ionization has a greater effect on the electrons than it does on the holes. We also find that the hole velocity saturates slowly with increasing reverse bias, and the hole current makes a large contribution to the harmonic power at 10 V. This result implies that decreasing the hole injection will decrease the harmonic power.Index Terms-2D simulation, impact ionization, nonlinearity, p-i-n photodetector.

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Section: B Basic Drift-diffusion Modelmentioning

confidence: 99%

“…Subsequent to the early simulation work [2]- [5], it has been discovered that several effects not included in the original studies can play an important role. These include external loading [6], thermionic emission at the heterojunction boundaries [7]- [9], incomplete ionization [9], impact ionization [9]- [12], and the Franz-Keldysh effect [13].…”

mentioning

confidence: 99%

Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector

Marks

Menyuk

et al. 2014

J. Lightwave Technol.

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“…To study carrier transport in the photodetector, we model a PDA photodetector in two dimensions, longitudinal and radial, using the 2D drift-diffusion equations [2,4,[11][12][13] with the configuration of Figs. 1 and 2, coupled with the heat flow equation.…”

Section: Drift-diffusion Modelmentioning

confidence: 99%

“…Impact ionization is also an important source of nonlinearity in the photodetector [2,4]. It can lead to an important increase in the electron and hole densities.…”

Section: Impact Ionizationmentioning

confidence: 99%

“…Nonlinearity in the photodetector leads to power generation at harmonics of the input signal frequencies, which limits the performance of these systems. We have studied the source of nonlinearity in a simple p-i-n photodetector [2][3][4], and we have found that impact ionization plays an important role in generating higher harmonic powers at high applied bias. We extend the model to study the sources of nonlinearity in a partially depleted absorber (PDA) photodetector [5], which has several absorption layers on each side of intrinsic region in PDA photodetector [5].…”

Section: Introductionmentioning

confidence: 99%

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Simulation of a partially depleted absorber (PDA) photodetector

Carruthers

Menyuk

et al. 2015

Opt. Express

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We use a 2D drift-diffusion model to study the nonlinear response of a partially depleted absorber (PDA) phododetector. The model includes external loading, incomplete ionization, the Franz-Keldysh effect, and history-dependent impact ionization. It also takes into account heat flow in the device. With all these effects included, we obtain excellent agreement with experiments for the responsivity and for the harmonic power at different modulation frequencies. The role of these different physical effects is elucidated, and we find that both the Franz-Keldysh effect and the load resistance play a key role in generating higher harmonic power at larger reverse biases. Increasing the size of the p-region absorption layers reduces the impact of the Franz-Keldysh effect. Decreasing the effective load resistance also decreases the higher harmonic powers. We also show that the model can suggest design changes that will improve device performance.

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Modeling nonlinearity in a partially depleted absorber photodetector and a modified uni-traveling carrier photodetector

Menyuk

Hutchinson

et al. 2014

2014 IEEE Photonics Conference

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Sources of nonlinearity in a PIN photodetector at high applied reverse bias

Cited by 4 publications

References 18 publications

Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector

Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector

Simulation of a partially depleted absorber (PDA) photodetector

Modeling nonlinearity in a partially depleted absorber photodetector and a modified uni-traveling carrier photodetector

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