Contact and non-contact based atomic force microscopy (AFM) approaches have been extensively utilized to explore various nanoscale surface properties. In most AFM-based measurements, a concurrent electrostatic effect between the AFM tip/cantilever and sample surface can occur. This electrostatic effect often hinders accurate measurements. Thus, it is very important to quantify as well as remove the impact of the electrostatic effect on AFM-based measurements. In this study, we examine the impact of the electrostatic effect on the electromechanical (EM) response in piezoresponse force microscopy as a model AFM mode. We quantitatively studied the effects of increasing the external electric field and reducing the spring constant of a cantilever. Further, we explored ways to minimize the electrostatic effect. The results provide broad guidelines for quantitatively analyzing the EM response as well as, eventually, for obtaining the electrostatic-free EM response. The conclusions can be applied to other AFM-based measurements that are subject to a strong electrostatic effect between the AFM tip/cantilever and sample surface, regardless of contact and non-contact modes.

Epitaxial thin films of CoFeO (CFO) have successfully been transferred from a SrTiO substrate onto a flexible polyimide substrate. By bending the flexible polyimide, different levels of uniaxial strain are continuously introduced into the CFO epitaxial thin films. Unlike traditional epitaxial strain induced by substrates, the strain from bending will not suffer from critical thickness limitation, crystalline quality variation, and substrate clamping, and more importantly, it provides a more intrinsic and reliable way to study strain-controlled behaviors in functional oxide systems. It is found that both the saturation magnetization and coercivity of the transferred films can be changed over the bending status and show a high accord with the movement of the curvature bending radius of the polyimide substrate. This reveals that the mechanical strain plays a critical role in tuning the magnetic properties of CFO thin films parallel and perpendicular to the film plane direction.

Fully epitaxial BaTiO(3)/CoFe(2)O(4) ferroelectric/ferromagnetic multilayered nanodot arrays, a new type of magnetoelectric (ME) nanocomposite with both horizontal and vertical orderings, were fabricated via a stencil-derived direct epitaxy technique. By reducing the clamping effect, ferroelectric domain modification and distinct magnetization change proportional to different interfacial area around the BaTiO(3) phase transition temperatures were found, which may pave the way to quantitative introducing of ME coupling at nanoscale and build high density multistate memory devices.

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Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe O thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe O films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics.

Large areas of perfectly ordered magnetic CoFe2O4 nanopillars embedded in a ferroelectric BiFeO3 matrix were successfully fabricated via a novel nucleation-induced self-assembly process. The nucleation centers of the magnetic pillars are induced before the growth of the composite structure using anodic aluminum oxide (AAO) and lithography-defined gold membranes as hard mask. High structural quality and good functional properties were obtained. Magneto-capacitance data revealed extremely low losses and magneto-electric coupling of about 0.9 μC/cmOe. The present fabrication process might be relevant for inducing ordering in systems based on phase separation, as the nucleation and growth is a rather general feature of these systems.

General synthesis of both binary and ternary V-VI based thermoelectric alloy hexagonal platelets was carried out for the first time in a unified system using a modified solvothermal method, which adopted convenient oxides as source materials and friendly ethylene glycol as both solvent and reducing agent. The structure and composition analysis reveal that the samples are pure phase with corresponding atomic ratios. Electron microscopy results indicate that the as-prepared products are uniform and highly crystallized. The formation process was studied in detail by observing time-dependent products, and it was found that the oriented attachment mechanism could be responsible for the growth of these hexagonal platelets, which exhibits intrinsic difference compared with the inferred seed-mediated growth mechanism in previous reports. The influence of pH value and polyvinyl pyrrolidone on the morphology of the products was investigated as well. This work may open up a new rationale on designing the solution synthesis of nanostructures for materials possessing similar intrinsic crystal symmetry.

We have grown horizontal oriented, high growth rate, well-aligned polar (0001) single crystalline GaN nanowires and high-density and highly aligned GaN nonpolar (11-20) nanowires on r-plane substrates by metal organic chemical vapor deposition. It can be found that the polar nanowires showed a strong yellow luminescence (YL) intensity compared with the nonpolar nanowires. The different trends of the incorporation of carbon in the polar, nonpolar, and semipolar GaN associated with the atom bonding structure were discussed and proved by energy-dispersive X-ray spectroscopy, suggesting that C-involved defects are the origin responsible for the YL in GaN nanowires.