Gallium oxide (Ga2O3), an emerging ultra-wide-bandgap semiconductor, has the desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field of 8 MV cm−1, decent electron mobility of 250 cm2 V s−1 and high theoretical Baliga figures of merit (BFOMs) of around 3000. Bolstered by their capability of an economical growth technique for high-quality bulk substrate, β-Ga2O3-based materials and devices have been highly sought after in recent years for power electronics and solar-blind ultraviolet photodetectors. This article reviews the most recent advances in β-Ga2O3 power device technologies. It will begins with a summary of the field and underlying semiconductor properties of Ga2O3, followed by a review of the growth methods of high-quality β-Ga2O3 bulk substrates and epitaxial thin films. Then, brief perspectives on the advanced technologies and measurements in terms of ohmic contact and interface state are provided. Furthermore, some state-of-the-art β-Ga2O3 photoelectronic devices, power devices and radiofrequency devices with distinguished performance are fully described and discussed. Some solutions to alleviating challenging issues, including the difficulty in p-type doping, low thermal conductivity and low mobility, are also presented and explored.

We have grown horizontal oriented, high growth rate, well-aligned polar (0001) single crystalline GaN nanowires and high-density and highly aligned GaN nonpolar (11-20) nanowires on r-plane substrates by metal organic chemical vapor deposition. It can be found that the polar nanowires showed a strong yellow luminescence (YL) intensity compared with the nonpolar nanowires. The different trends of the incorporation of carbon in the polar, nonpolar, and semipolar GaN associated with the atom bonding structure were discussed and proved by energy-dispersive X-ray spectroscopy, suggesting that C-involved defects are the origin responsible for the YL in GaN nanowires.

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