Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

Abstract

We have grown horizontal oriented, high growth rate, well-aligned polar (0001) single crystalline GaN nanowires and high-density and highly aligned GaN nonpolar (11-20) nanowires on r-plane substrates by metal organic chemical vapor deposition. It can be found that the polar nanowires showed a strong yellow luminescence (YL) intensity compared with the nonpolar nanowires. The different trends of the incorporation of carbon in the polar, nonpolar, and semipolar GaN associated with the atom bonding structure were discussed and proved by energy-dispersive X-ray spectroscopy, suggesting that C-involved defects are the origin responsible for the YL in GaN nanowires.

In situ asymmetric island sidewall growth of high-quality semipolar (112̄2) GaN on m-plane sapphire

“…[1][2][3][4][5][6][7] In comparison with nonpolar GaN, semipolar GaN grown on (1122) and (2021) atomic planes has the merits of a high indium incorporation efficiency 8 and a wide growth window. 9,10 (1122) semipolar GaN is of a nearly free electric field and thus preferred as a growth template of long-wavelength GaN-based optoelectronic devices.…”

Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate

“…Due to the high prices and small size of bulk GaN substrates [1][2][3][4]. GaN is typically grown heteroepitaxially on foreign substrates.…”

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

“…To improve the production efficiency, some great MOCVD manufacturers also focus on how to improve and increase the MOCVD cavity and the sapphire substrate size in foreign countries. At present, two-inch and four-inch epitaxial wafers are frequently used, so manufacturers who can produce six-inch SiC and Si substrate epitaxial wafers with high quality in foreign countries would sell chips abroad [14,15].…”