High-harmonic generation by focusing a femtosecond laser onto a gas is a well-known method of producing coherent extreme-ultraviolet (EUV) light. This nonlinear conversion process requires high pulse intensities, greater than 10(13) W cm(-2), which are not directly attainable using only the output power of a femtosecond oscillator. Chirped-pulse amplification enables the pulse intensity to exceed this threshold by incorporating several regenerative and/or multi-pass amplifier cavities in tandem. Intracavity pulse amplification (designed not to reduce the pulse repetition rate) also requires a long cavity. Here we demonstrate a method of high-harmonic generation that requires no extra cavities. This is achieved by exploiting the local field enhancement induced by resonant plasmons within a metallic nanostructure consisting of bow-tie-shaped gold elements on a sapphire substrate. In our experiment, the output beam emitted from a modest femtosecond oscillator (100-kW peak power, 1.3-nJ pulse energy and 10-fs pulse duration) is directly focused onto the nanostructure with a pulse intensity of only 10(11) W cm(-2). The enhancement factor exceeds 20 dB, which is sufficient to produce EUV wavelengths down to 47 nm by injection with an argon gas jet. The method could form the basis for constructing laptop-sized EUV light sources for advanced lithography and high-resolution imaging applications.

We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ∼10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.

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Contact and non-contact based atomic force microscopy (AFM) approaches have been extensively utilized to explore various nanoscale surface properties. In most AFM-based measurements, a concurrent electrostatic effect between the AFM tip/cantilever and sample surface can occur. This electrostatic effect often hinders accurate measurements. Thus, it is very important to quantify as well as remove the impact of the electrostatic effect on AFM-based measurements. In this study, we examine the impact of the electrostatic effect on the electromechanical (EM) response in piezoresponse force microscopy as a model AFM mode. We quantitatively studied the effects of increasing the external electric field and reducing the spring constant of a cantilever. Further, we explored ways to minimize the electrostatic effect. The results provide broad guidelines for quantitatively analyzing the EM response as well as, eventually, for obtaining the electrostatic-free EM response. The conclusions can be applied to other AFM-based measurements that are subject to a strong electrostatic effect between the AFM tip/cantilever and sample surface, regardless of contact and non-contact modes.

The demand for non-volatile memory technologies that offer high speed, high storage density and low power consumption has stimulated extensive research into new functional materials and device physics. [1][2][3][4][5] Nano-ferronic devices based on multiferroic/ferroelectric materials have been emerging as nextgeneration nano-electronics, which deal with the interplay between ferroic orders (e.g. ferroelectricity and ferromagnetism) and electronic transport on the nanoscale. [ 6 ] Recent investigations into various multiferroic/ferroelectric materials have revealed remarkable polarization dependent electronic transport properties, which include signifi cant electroresistance effects in a switchable ferroelectric diode [7][8][9][10][11] and multiferroic/ferroelectric tunnel junctions (M/FTJs) [12][13][14][15][16][17] and intriguing charge conduction in ferroelectric domain/walls. [ 18 , 19 ] These conduction properties can be utilized for fast and non-destructive readout in emergent non-volatile memories such as resistive random access memory (RRAM) and memristor. [ 20 ] Especially, ferroelectric-resistive memories based on ferroelectric diode and tunnel junctions have demonstrated that it is possible to achieve high resistive ON/OFF ratio, high speed and low write power with a high reproducibility by controlling ferroelectric polarization. In a switchable ferroelectric diode, the Schottky-to-Ohmic contacts, forming at the interfaces between metal electrodes and semiconducting ferroelectric thin fi lms, are reversibly modulated by the polarization fl ipping which gives rise to rectifi cation direction switching . [8][9][10][11] The tunnel junctions with ultrathin ferroelectric barrier yield a giant tunnel electroresistance effect resulting from the change of asymmetric tunnel barrier heights controlled by ferroelectric polarization direction. However, multiferroic/ferroelectric nano-structures such as nano-islands and nano-wires have not yet been exploited for ferroelectric-resistive memories, although large storage capacity, lower power consumption and high reliability are expected for such nano-structures. They also provide an effective way to understand and manipulate the ferroelectric-resistive switching, piezoelectricity, polarization and domain structures on the nanoscale. On the other hand, the fabrication of ferroelectric nano-structures through bottom-up approach is crucial to realizing high-performance of nano-ferronic devices since top-down approach may induce serious deterioration in ferroelectric nano-structures. [ 21 , 22 ] Here, we explored the local charge conductions and their coupling with ferroelectric polarization in highly oriented ferroelectric BiFeO 3 (BFO) nano-islands array by using conductive atomic force microscopy (CAFM) and piezoresponse force microscopy (PFM). We observed a switchable diode effect in BFO nano-islands grown on SrRuO 3 /SrTiO 3 (SRO/STO) substrate, which showed the direct correlation between rectifi cation and ferroelectric polarization directions. The rectifi cation...

We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO3 (PTO) films using both Kelvin probe and piezoresponse force microscopy. The surface potential changes as a function of applied biases suggested that the amount and sign of surface potentials depend on the correlation between polarization and screen charges. It also suggested that the trapped negative charges exist on the as-deposited PTO surfaces. Injected charges and their resultant surface potentials are investigated by grounded tip scans. The results unveiled the origin of surface potential changes during ferroelectric switching in the epitaxial PTO films.

CH3NH3PbI3(MAPbI3) perovskite thin films were applied for piezoelectric generators under various applied pressures, poling field conditions, and switching polarity test.