NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

A template-directed synthesis strategy is an ideal tool to fabricate oxide nanotubes in that their physical dimensions can be precisely controlled and monodisperse samples can be harvested in large quantity. The wall thickness of the oxide nanotubes is controllable by varying the deposition conditions, and the length and diameter can be tailored in accordance with the templates used. A wealth of functional oxide materials with the controlled polymorphs can be deposited to be nanotubular structures by various synthesis methods. This short review article describes the recent progress made in the field of the template synthesis of oxide nanotubes. We begin this review with the comprehensive survey on the research activities of the template-directed oxide nanotubes. We then focus on the template synthesis that combines porous membrane templates with various deposition techniques and discuss the processing issues associated with coating inside nanoscale pores, selective etching of oxide nanotubes from the templates, and dispersion against the formation of nanotubes’ bundle-up. Structures and physical properties of the oxide nanotubes prepared by template synthesis are also summarized. Their potential for application in drug-delivery systems, sensors, and solar energy conversion devices, which could be facilitated by the template synthesis, is discussed. Finally, we conclude this review as providing our perspectives to the future directions in the template-directed oxide nanotubes.

Despite the high power conversion efficiency (PCE) of perovskite solar cells (PSCs), poor long-term stability is one of the main obstacles preventing their commercialization. Several approaches to enhance the stability of PSCs have been proposed. However, an accelerating stability test of PSCs at high temperature under the operating conditions in ambient air remains still to be demonstrated. Herein, interface-engineered stable PSCs with inorganic charge-transport layers are shown. The highly conductive Al-doped ZnO films act as efficient electron-transporting layers as well as dense passivation layers. This layer prevents underneath perovskite from moisture contact, evaporation of components, and reaction with a metal electrode. Finally, inverted-type PSCs with inorganic charge-transport layers exhibit a PCE of 18.45% and retain 86.7% of the initial efficiency for 500 h under continuous 1 Sun illumination at 85 °C in ambient air with electrical biases (at maximum power point tracking).

Oxide semiconductors afford a promising alternative to organic semiconductors and amorphous silicon materials in applications requiring transparent thin film transistors (TFTs). We synthesized an aqueous inorganic precursor by a direct dissolution of zinc hydroxide in ammonium hydroxide solution from which a dense and uniform ZnO semiconducting layer is achieved. Solution-processed ZnO-TFTs prepared at 140 C by microwave irradiation have shown enhanced device characteristics of $1.7 cm 2 V À1 s À1 mobility and a $10 7 on/off current ratio, with good air stability. Spectroscopic analyses confirmed that such a device improvement originates from accelerated dehydroxylation and better crystallization at low temperature by microwave irradiation. Our results suggest that solutionprocessable oxide semiconductors have potential for low-temperature and high-performance applications in transparent devices.

We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO3 (PTO) films using both Kelvin probe and piezoresponse force microscopy. The surface potential changes as a function of applied biases suggested that the amount and sign of surface potentials depend on the correlation between polarization and screen charges. It also suggested that the trapped negative charges exist on the as-deposited PTO surfaces. Injected charges and their resultant surface potentials are investigated by grounded tip scans. The results unveiled the origin of surface potential changes during ferroelectric switching in the epitaxial PTO films.

The edge sites of molybdenum disulfide (MoS 2 ) have been shown to be efficient electrocatalysts for the hydrogen evolution reaction (HER). To utilize these structures, two main strategies have been proposed. The first strategy is to use amorphous structures, which should be beneficial in maximizing the area of the edge-site moieties of MoS 2 . However, these structures experience structural instability during HER. The other strategy is nanostructuring, in which, to enhance the resulting HER performance, the exposed surfaces of MoS 2 cannot be inert basal planes. Therefore, MoS 2 may need critical nanocrystallinity to produce the desired facets. Here, we first describe that when atomic layer deposition (ALD) is applied to layered materials such as MoS 2 , MoS 2 exhibits the nonideal mode of ALD growth on planar surfaces. As a model system, the ALD of MoCl 5 and H 2 S was studied. This nonideality does not allow for the conventional linear relationship between the growth thickness and the number of cycles. Instead, it provides the ability to control the relative ratios of the edge sites and basal planes of MoS 2 to the exposed surfaces. The number of edge sites produced was carefully characterized in terms of the geometric surface area and effective work function and was correlated to the HER performance, including Tafel slopes and exchange current densities. We also discussed how, as a result of the low growth temperature, the incorporation of chlorine impurities affected the electron doping and formation of mixed 2H and 1T phases. Remarkably, the resulting 1T phase was stable even upon thermal annealing at 400 °C. With the simple, planar MoS 2 films, we monitored the resulting catalytic performance, finding current densities of up to 20 mA cm −2 at −0.3 V versus the reversible hydrogen electrode (RHE), a Tafel slope of 50−60 mV/decade, and an onset potential of 143 mV versus RHE.

We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.

The authors fabricated Pb(Zr0.52Ti0.48)O3–NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. The authors measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains.