Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells.

NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

A BiVO4 with a preferred [001] orientation and exposed {001} facets were grown epitaxially on FTO via a laser ablation, achieving the state-of-the-art photoelectrochemical performance for solar water-oxidation.

Organic-inorganic perovskites with intriguing optical and electrical properties have attracted significant research interests due to their excellent performance in optoelectronic devices. Recent efforts on preparing uniform and large-grain polycrystalline perovskite films have led to enhanced carrier lifetime up to several microseconds. However, the mobility and trap densities of polycrystalline perovskite films are still significantly behind their single-crystal counterparts. Here, a facile topotactic-oriented attachment (TOA) process to grow highly oriented perovskite films, featuring strong uniaxial-crystallographic texture, micrometer-grain morphology, high crystallinity, low trap density (≈4 × 10 cm ), and unprecedented 9 GHz charge-carrier mobility (71 cm V s ), is demonstrated. TOA-perovskite-based n-i-p planar solar cells show minimal discrepancies between stabilized efficiency (19.0%) and reverse-scan efficiency (19.7%). The TOA process is also applicable for growing other state-of-the-art perovskite alloys, including triple-cation and mixed-halide perovskites.

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We describe the fabrication of crystallographically preferred oriented TiO 2 anatase nanotube arrays (p-NTAs) and the characterization of their photovoltaic properties. The preferred orientation to the (004) plane of the TiO 2 nanotube array (NTA) was carefully controlled by adjusting the water content in the anodizing electrolyte; $2 wt% of water yielded a p-NTA, whereas other contents of water yielded randomly oriented NTAs (r-NTAs). A structural analysis using X-ray diffraction and a high-resolution transmission electron microscope revealed that the p-NTA showed a preferred orientation along the [001] direction of the anatase crystal structure. When the NTAs were employed to dye-sensitized solar cells (DSSCs) as photoelectrodes, the p-NTA showed a similar electron lifetime to the r-NTA, which was an order of magnitude higher than that for a TiO 2 nanoparticle (NP) film. Moreover, the p-NTA exhibited faster electron transport than the NP film, and even faster than the r-NTA. These properties resulted in a longer electron diffusion length of the p-NTA, compared to the r-NTA and NP film, thereby improving the charge collection property of the photoelectrode. The p-NTA exhibited superior photovoltaic energy conversion performance in the DSSC system, and showed a higher thickness for the optimal photovoltaic performance compared to the NP film, which were attributed to the excellent charge collection properties. Our results address that the crystallographic orientation of NTAs improves their charge transport properties, which can be applied to various optoelectronics, especially to solar-driven energy conversion devices.

Given that the highest certified conversion efficiency of the organic-inorganic perovskite solar cell (PSC) already exceeds 22 %, which is even higher than that of the polycrystalline silicon solar cell, the significance of new scalable processes that can be utilized for preparing large-area devices and their commercialization is rapidly increasing. From this perspective, the electrodeposition method is one of the most suitable processes for preparing large-area devices because it is an already commercialized process with proven controllability and scalability. Here, a highly uniform NiO layer prepared by electrochemical deposition is reported as an efficient hole-extraction layer of a p-i-n-type planar PSC with a large active area of >1 cm . It is demonstrated that the increased surface roughness of the NiO layer, achieved by controlling the deposition current density, facilitates the hole extraction at the interface between perovskite and NiO , and thus increases the fill factor and the conversion efficiency. The electrochemically deposited NiO layer also exhibits extremely uniform thickness and morphology, leading to highly efficient and uniform large-area PSCs. As a result, the p-i-n-type planar PSC with an area of 1.084 cm exhibits a stable conversion efficiency of 17.0 % (19.2 % for 0.1 cm ) without showing hysteresis effects.

Low-temperature-processed perovskite solar cells (PSCs), especially those fabricated on flexible substrates, exhibit device performance that is worse than that of high-temperature-processed PSCs. One of the main reasons for the inferior performance of low-temperature-processed PSCs is the loss of photogenerated electrons in the electron collection layer (ECL) or related interfaces, i.e., indium tin oxide/ECL and ECL/perovskite. Here, we report that tailoring of the energy level and electron transporting ability in oxide ECLs using Zn2SnO4 nanoparticles and quantum dots notably minimizes the loss of photogenerated electrons in the low-temperature-fabricated flexible PSC. The proposed ECL with methylammonium lead halide [MAPb(I0.9Br0.1)3] leads to fabrication of significantly improved flexible PSCs with steady-state power conversion efficiency of 16.0% under AM 1.5G illumination of 100 mW cm(-2) intensity. These results provide an effective method for fabricating high-performance, low-temperature solution-processed flexible PSCs.