A Three-Terminal Monolithic Perovskite/Si Tandem Solar Cell Characterization Platform

Park, Ik Jae; Park, Jae Hyun; Su, Junfeng; Park, Min‐Ah; Jang, Jin Ho; Kim, Jin Young

doi:10.1016/j.joule.2018.11.017

Cited by 86 publications

(97 citation statements)

References 42 publications

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“…TPVD analysis and evaluation of the dependence of V OC on the temperature (i.e., V OC -T measurement) were used to investigate the internal recombination kinetics in our CZTSSe devices. 33,34 In Figure 5A, the minority carrier lifetime (or recombination time constant), τ r , obtained by TPVD is plotted as a function of V OC . The CZTSSe thin-film solar cells with PHT had a longer minority carrier lifetime than those without PHT, which is responsible for the enhanced V OC observed in Figure 4A collecting capability.…”

Section: Characterizationmentioning

confidence: 99%

Improved interfacial properties of electrodeposited Cu₂ZnSn(S,Se)₄ thin‐film solar cells by a facile post‐heat treatment process

Hwang

Park

Cheon

et al. 2020

Progress in Photovoltaics

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Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin-film solar cells offer various advantages including excellent optical and electrical properties, nontoxic and earth-abundant raw materials, and a simple fabrication process. However, these devices suffer from a high deficit of the open-circuit voltage (V OC), mainly caused by interface recombination, which increases with increasing surface roughness. In this study, to achieve a high V OC and enhance the overall device performance, an additional heat treatment process was introduced during the fabrication of co-electrodeposited rough CZTSSe solar cells, and its effect on the photovoltaic properties was systematically investigated using various characterization techniques including diode analysis, transient photovoltage decay measurement, evaluation of the temperature dependency of the open-circuit voltage, current-voltage and drive-level capacitance profile analysis, and electrochemical impedance spectroscopy. At the optimized post-heat treatment (PHT) temperature of 200 C, a significant increase in the conversion efficiency (as high as 32%, from 7.11% to 9.40%) was observed owing to the change in the interfacial materials properties (i.e., higher conductivity and reduced interfacial nonradiative recombination), which in turn is a consequence of the diffusion of the Cd ions and the expansion of the Cu-poor/Zn-rich phase. The PHT-applied CZTSSe device exhibited a high conversion efficiency close to the record-high one reported for electrodeposited CZTSSe thin-film solar cells. These findings confirm the

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Section: Characterizationmentioning

confidence: 99%

Improved interfacial properties of electrodeposited Cu₂ZnSn(S,Se)₄ thin‐film solar cells by a facile post‐heat treatment process

Hwang

Park

Cheon

et al. 2020

Progress in Photovoltaics

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“…The EQE of 4T tandem was obtained by measuring the EQE of each subcell (as for GaAs bottom‐cell measurement, the perovskite top‐cell was utilized as a filter). The EQE of the 2T tandem cell was measured by three‐terminal mode using ITO intermediate layer between subcells that can provide more accurate EQE signals of top‐ and bottom‐cell without light and potential bias . The transmittance and reflectance were measured using Cary 5000 UV–vis–NIR spectrophotometer with an integrating sphere.…”

Section: Methodsmentioning

confidence: 99%

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

Kim

Han

et al. 2019

Advanced Energy Materials

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Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their performance, a wider bandgap PV structure such as indium gallium phosphide (InGaP) has been integrated in two‐terminal (2T) tandem configuration. However, it increases the overall fabrication cost, complicated tunnel‐junction diode connecting subcells are inevitable, and materials are limited by lattice matching. Here, high‐efficiency and stable wide‐bandgap perovskite PVs having comparable bandgap to InGaP (1.8–1.9 eV) are developed, which can be stable low‐cost add‐on layers to further enhance the performance of GaAs PVs as tandem configurations by showing an efficiency improvement from 21.68% to 24.27% (2T configuration) and 25.19% (4T configuration). This approach is also feasible for thin‐film GaAs PV, essential to reduce its fabrication cost for commercialization, with performance increasing from 21.85% to 24.32% and superior flexibility (1000 times bending) in a tandem configuration. Additionally, potential routes to over 30% stable perovskite/GaAs tandems, comparable to InGaP/GaAs with lower cost, are considered. This work can be an initial step to reach the objective of improving the usability of GaAs PV technology with enhanced performance for applications for which lightness and flexibility are crucial, without a significant additional cost increase.

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“…To facilitate or simplify the accurate characterization of monolithic 2T TSCs and circumvent the spectral mismatch issue, researchers designed a three-terminal monolithic tandem configuration and showed precise measurement results. [99][100][101][102]…”

Section: Inorganic Perovskitesmentioning

confidence: 99%

Perovskite‐Based Tandem Solar Cells: Get the Most Out of the Sun

Zhang

Meng

et al. 2020

Adv Funct Materials

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Tandem solar cells (TSCs) comprising stacked narrow‐bandgap and wide‐bandgap subcells are regarded as the most promising approach to break the Shockley–Queisser limit of single‐junction solar cells. As the game‐changer in the photovoltaic community, organic–inorganic hybrid perovskites became the front‐runner candidate for mating with other efficient photovoltaic technologies in the tandem configuration for higher power conversion efficiency, by virtue of their tunable and complementary bandgaps, excellent photoelectric properties, and solution processability. In this review, a perspective that critically dilates the progress of perovskite material selection and device design for perovskite‐based TSCs, including perovskite/silicon, perovskite/copper indium gallium selenide, perovskite/perovskite, perovskite/CdTe, and perovskite/GaAs are presented. Besides, all‐inorganic perovskite CsPbI3 with high thermal stability is proposed as the top subcell in TSCs due to its suitable bandgap of ≈1.73 eV and rapidly increasing efficiency. To minimize the optical and electrical losses for high‐efficiency TSCs, the optimization of transparent electrodes, recombination layers, and the current‐matching principles are highlighted. Through big data analysis, wide‐bandgap perovskite solar cells with high open‐circuit voltage (Voc) are in dire need in further study. In the end, opportunities and challenges to realize the commercialization of TSCs, including long‐term stability, area upscaling, and mitigation of toxicity, are also envisioned.

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A Three-Terminal Monolithic Perovskite/Si Tandem Solar Cell Characterization Platform

Cited by 86 publications

References 42 publications

Improved interfacial properties of electrodeposited Cu₂ZnSn(S,Se)₄ thin‐film solar cells by a facile post‐heat treatment process

Improved interfacial properties of electrodeposited Cu₂ZnSn(S,Se)₄ thin‐film solar cells by a facile post‐heat treatment process

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

Perovskite‐Based Tandem Solar Cells: Get the Most Out of the Sun

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A Three-Terminal Monolithic Perovskite/Si Tandem Solar Cell Characterization Platform

Cited by 86 publications

References 42 publications

Improved interfacial properties of electrodeposited Cu2ZnSn(S,Se)4 thin‐film solar cells by a facile post‐heat treatment process

Improved interfacial properties of electrodeposited Cu2ZnSn(S,Se)4 thin‐film solar cells by a facile post‐heat treatment process

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

Perovskite‐Based Tandem Solar Cells: Get the Most Out of the Sun

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Improved interfacial properties of electrodeposited Cu₂ZnSn(S,Se)₄ thin‐film solar cells by a facile post‐heat treatment process

Improved interfacial properties of electrodeposited Cu₂ZnSn(S,Se)₄ thin‐film solar cells by a facile post‐heat treatment process