We designed planar electrodes, for dielectrophoretic manipulation of single-walled carbon nanotubes (SWNTs), built as metal-oxide-semiconductor nanogap capacitors with common substrate and oxide thicknesses of 17 and 150 nm. Such design generates high electric fields (10(9) V m(-1)) and also the fringing field is curved due to the conducting substrate, unlike fields generated by conventionally used planar electrodes. Scanning electron microscopy images showed SWNTs aligned parallel and perpendicular to the electrodes. Raman spectroscopic mapping was used to produce separate images of the metallic (m-SWNT) and semiconducting (s-SWNT) nanotube density distributions. As expected, parallel alignment of the m-SWNTs with the E-field was found; however, also a perpendicular alignment of s-SWNTs was observed. Such orthogonal alignment of s-SWNTs is a rare observation and has not been experimentally reported before in detail with Raman images. Due to the unique electrode design, we were able to obtain substantial separation of m-SWNTs and s-SWNTs. Numerical modeling of the electric field factor of the dielectrophoresis force was done, and it matched perfectly with the experimental results. The orthogonal alignment of s-SWNTs results from comparable values of parallel and perpendicular polarizability to the nanotube axis.

A biological microelectromechanical system (BioMEMS) device was designed to study complementary mitochondrial parameters important in mitochondrial dysfunction studies. Mitochondrial dysfunction has been linked to many diseases, including diabetes, obesity, heart failure and aging, as these organelles play a critical role in energy generation, cell signaling and apoptosis. The synthesis of ATP is driven by the electrical potential across the inner mitochondrial membrane and by the pH difference due to proton flux across it. We have developed a tool to study the ionic activity of the mitochondria in parallel with dielectric measurements (impedance spectroscopy) to gain a better understanding of the properties of the mitochondrial membrane. This BioMEMS chip includes: 1) electrodes for impedance studies of mitochondria designed as two- and four-probe structures for optimized operation over a wide frequency range and 2) ion-sensitive field effect transistors for proton studies of the electron transport chain and for possible monitoring other ions such as sodium, potassium and calcium. We have used uncouplers to depolarize the mitochondrial membrane and disrupt the ionic balance. Dielectric spectroscopy responded with a corresponding increase in impedance values pointing at changes in mitochondrial membrane potential. An electrical model was used to describe mitochondrial sample’s complex impedance frequency dependencies and the contribution of the membrane to overall impedance changes. The results prove that dielectric spectroscopy can be used as a tool for membrane potential studies. It can be concluded that studies of the electrochemical parameters associated with mitochondrial bioenergetics may render significant information on various abnormalities attributable to these organelles.

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SummaryDiborides of Ti, Hf and Zr are thermally, mechanically and chemically stable with good thermal and electrical conductivity. We tested their properties in front-end processes used in Si integrated circuits (IC). Films were deposited by e-beam evaporation either on Si, for the formation of contacts to the source/drain (S/D) regions, or on Si oxides, for the formation of metal gates in p-type metal-oxide-semiconductor (PMOS) transistors. We focused on their crystallization caused by rapid thermal processing (RTP) at temperatures up to 1100 °C. Transmission electron microscopy was used for identification of nanocrystallites of TiB 2 , ZrB 2 , and HfB 2 . The grain growth was correlated with temperature and time of RTP. Of all borides, HfB 2 resulted in the most complete crystallization with little amorphous phase left. There was no crystallographic degradation of the interface with Si or dielectrics, except for extreme thermal budgets. Complementary techniques were used for monitoring chemical stability and electrical parameters of test structures to assess the role of recrystallization in device behaviour.

Rapid thermal diffusion (RTD) of phosphorus has been investigated using a spin-on dopant (SOD) deposited on a silicon wafer and placed as a dopant source in proximity to a processed Si wafer. In such a process, the efficiency of doping is affected by the amount of P supplied from the SOD to the processed wafer. Doping in RTD is controlled by the thickness of the SOD and its structure, which depends on low-temperature baking. Experimental results of secondary-ion-mass spectroscopy analyses and sheet resistance indicate that diffusion coefficients of phosphorus in the SOD during RTD are considerably larger than in thermal oxides.