Silicon doping from phosphorus spin-on dopant sources in proximity rapid thermal diffusion

Zagozdzon‐Wosik, W.; Grabiec, P.; Lux, G.

doi:10.1063/1.355855

Cited by 24 publications

(11 citation statements)

References 33 publications

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“…To form the highly doped emitter on the top surface of the SiNW-SC, a proximity doping process was utilized. [46] A 2% solution of ammonium dihydrogen phosphate (ADP) and DI water was spin coated on an unetched Si wafer which was then used as the n-type doping source wafer for proximity doping of the SiNW samples. To ensure uniform coating of ADP on the wafer surface, the samples were submerged in H 2 O 2 for 5 minutes at room temperature before the spin coating step.…”

Section: Sinw-sc Fabricationmentioning

confidence: 99%

Surface Modifying Doped Silicon Nanowire Based Solar Cells for Applications in Biosensing

Smith

Duan

Quarterman

et al. 2018

Adv Materials Technologies

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ADP -ammonium dihydrogen phosphate, antiPSA -monoclonal antibodies specific for PSA, APTES -(3 aminopropyl) triethoxysilane, BSF -back surface field, BSA -bovine serum albumin, DNAdeoxyribonucleic acid, EDC -1-ethyl-3-(3-dimethylaminopropyl) carbodiimide, ELISA -Enzyme Linked Immunosorbent Assay, EQE -external quantum efficiency, FET-field effect transistors, MACEmetal assisted chemical etching, , NW -nanowire, PBS -Phosphate Buffered Saline, PC -Prostate cancer, PCR -polymerase chain reaction, pI-Isoelectric point, PSA-prostate specific antigen, SiNW -Silicon nanowire, SiNW-FET -silicon nanowire field effect transistors, SiNW-SC -Silicon nanowire based solar cells, sNHS -N-hydroxysulfosuccinimide, VLS CVD-vapor liquid solid chemical vapor deposition.

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Section: Sinw-sc Fabricationmentioning

confidence: 99%

Surface Modifying Doped Silicon Nanowire Based Solar Cells for Applications in Biosensing

Smith

Duan

Quarterman

et al. 2018

Adv Materials Technologies

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“…Considerable research has been undertaken to synthesize graphene on metal substrates using the CVD process to produce high-quality large-area graphene films. Sufficiently high quality of graphene films is demonstrated by a single-crystalline structure free of wrinkles, contamination, and cracks [35]. However, various and often critical applications can require that the CVD-grown graphene films be transferred onto other more suitable substrates.…”

Section: Evolution Of Substrate Transfer Techniquesmentioning

confidence: 99%

Doping and Transfer of High Mobility Graphene Bilayers for Room Temperature Mid-Wave Infrared Photodetectors

Sood¹,

Zeller²,

Ghuman³

et al. 2022

21st Century Nanostructured Materials - Physics, Chemistry, Classification, and Emerging Applications in Industry, Biomedicine,

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High-performance graphene-HgCdTe detector technology has been developed combining the best properties of both materials for mid-wave infrared (MWIR) detection and imaging. The graphene functions as a high mobility channel that whisks away carriers before they can recombine, further contributing to detection performance. Comprehensive modeling on the HgCdTe, graphene, and the HgCdTe-graphene interface has aided the design and development of this MWIR detector technology. Chemical doping of the bilayer graphene lattice has enabled p-type doping levels in graphene for high mobility implementation in high-performance MWIR HgCdTe detectors. Characterization techniques, including SIMS and XPS, confirm high boron doping concentrations. A spin-on doping (SOD) procedure is outlined that has provided a means of doping layers of graphene on native substrates, while subsequently allowing integration of the doped graphene layers with HgCdTe for final implementation in the MWIR photodetection devices. Successful integration of graphene into HgCdTe photodetectors can thus provide higher MWIR detector efficiency and performance compared to HgCdTe-only detectors. New earth observation measurement capabilities are further enabled by the room temperature operational capability of the graphene-enhanced HgCdTe detectors and arrays to benefit and advance space and terrestrial applications.

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“…Information on different properties, such as doping efficiency, density, refractive index, and thickness have been found for phosphosilicate glass (PSG) films in Ref. [8][9][10][11][12] and for SOG films in Ref. [13][14][15].…”

mentioning

confidence: 99%

Spectroscopic Investigations of Borosilicate Glass and Its Application as a Dopant Source for Shallow Junctions

Nolan¹,

Perova²,

Moore³

et al. 2000

J. Electrochem. Soc.

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Borosilicate glass was investigated as a dopant source for proximity rapid thermal diffusion. A borosilicate gel was spun onto a silicon wafer and the layer was rapid thermally processed to convert it to a borosilicate glass. Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and sheet resistance measurements were used to understand and subsequently optimise the conversion of the gel to a borosilicate glass. The optimum conversion step, which avoided any boron loss from the borosilicate glass layer, was a curing step of 900ЊC for 45 s. Secondary ion mass spectrometry was used to measure the boron dopant profile of a silicon wafer that was doped with the borosilicate glass layer. The wafer had a surface dopant concentration of 4.7 ϫ 10 19 cm Ϫ3 and a junction depth of 65.5 nm. Junction diodes, which were fabricated using the glass layer as a dopant source, displayed excellent characteristics, with very low leakage currents and a near ideal forward slope.

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Silicon doping from phosphorus spin-on dopant sources in proximity rapid thermal diffusion

Cited by 24 publications

References 33 publications

Surface Modifying Doped Silicon Nanowire Based Solar Cells for Applications in Biosensing

Surface Modifying Doped Silicon Nanowire Based Solar Cells for Applications in Biosensing

Doping and Transfer of High Mobility Graphene Bilayers for Room Temperature Mid-Wave Infrared Photodetectors

Spectroscopic Investigations of Borosilicate Glass and Its Application as a Dopant Source for Shallow Junctions

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