Results are presented to show an improved method for composition characterization of HgCdTe heterostructure using secondary ion mass spectroscopy. This method utilizes the molecular ions CsM + rather than M • ions. The advantage is that the molecular CsM § ion yield, unlike the atomic M • ions, is quite insensitive to the matrix material from which they are emitted. Composition ofmultilayer HgCdTe structure can be determined with excellent accuracy and depth resolution. Layer thickness of HgCdTe heterostructure can also be calibrated.
Rapid thermal diffusion (RTD) of phosphorus has been investigated using a spin-on dopant (SOD) deposited on a silicon wafer and placed as a dopant source in proximity to a processed Si wafer. In such a process, the efficiency of doping is affected by the amount of P supplied from the SOD to the processed wafer. Doping in RTD is controlled by the thickness of the SOD and its structure, which depends on low-temperature baking. Experimental results of secondary-ion-mass spectroscopy analyses and sheet resistance indicate that diffusion coefficients of phosphorus in the SOD during RTD are considerably larger than in thermal oxides.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.