Fabrication of submicron junctions-proximity rapid thermal diffusion of phosphorus, boron, and arsenic

Conformal P‐N junctions in macroporous silicon for photovoltaic energy conversion

“…This was previously achieved via solid source diffusion and has been reported in [12]. In the present work, proximity rapid thermal diffusion (PRTD) [14][15][16], was adopted as a better alternative [13]. Further development of this process reported herein has resulted in better control of the diffusion process and more consistent junction formation in the pores and ultimately improved device performance.…”

“…Preliminary results obtained with macroporous silicon (MPS) layers as deep as 80 μm showed a promising photovoltaic response [12,13]. A newly developed proximity rapid thermal diffusion process based on reports from [14][15][16] allows for shallow, strongly doped regions which extend throughout the MPS matrix to form the final 3-D p-n diode. Such efforts have resulted in the ability to control the device's p-n junction depth, strength of the built-in potential, and fill factor, which ultimately dictates…”

Monolithic integration of a p-n junction and porous silicon host matrix for next generation photovoltaics

“…This process was time-consuming and produced phosphorous junctions of various qualities. To improve upon this, a newly developed process based on proximity rapid thermal diffusion (PRTD) [6][7][8] was used. This process utilizes an AG Heatpulse 610 rapid thermal processor (RTP) and process times of only several minutes per wafer.…”

“…Furthermore, integration efforts of a newly developed proximity rapid thermal diffusion process based on reports from [6][7][8] allows for shallow, strongly doped regions which extend throughout the macroporous silicon (MPS) host matrix to form the final 3-D p-n diode. To our knowledge, PS has only been used as an antireflection or surface passivation layer for solar cells [9][10][11][12][13] and the work herein is the first report of a 3-D diode with an effective internal surface area on the order of thousands of cm 2 /cm 3 .…”

A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation

“…Recently, it was demonstrated that technologies for ultra-shallow junction formation may be applied to realize Si Esaki diodes [2]. Proximity rapid thermal diffusion [3] of boron into heavily phosphorous doped Si was used to form Esaki tunnel diodes. Studies of Esaki diodes grown by molecular beam epitaxy have shown that the introduction of an SiGe layer between the heavily doped Si electrodes increases the current density [4], [5].…”