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Reliability issues currently hamper the commercialization of capacitive RF MEMS switches. The most important failure mode is parasitic charging of the dielectric of such devices. In this paper we present an improved analytical model that enables us to calculate and understand the effect of insulator charging on the behavior of capacitive RF MEMS switches, and to describe the way they fail, and their reliability. Emphasis is placed on a shift of the pull-out voltage to predict failures. Tests with capacitive RF MEMS switches have been performed that validate the most important features of the model.

One of the most important reliability problems in micro-electromechanical systems (MEMSs) is stiction, the adhesion of contacting surfaces due to surface forces. After reviewing the known physical theory, and the measurement method commonly used to investigate stiction, we present a model that can be used to investigate the sensitivity of MEMS to stiction. It quantitatively predicts the surface interaction energy of surfaces in contact. Included in the model is the roughness of the contacting surfaces and the environmental conditions (humidity and temperature). This is done by describing the surface interaction energy as a function of the distance between the surfaces. This distance is not a unique number, but rather a distribution of distances. It is shown that, if we know this distribution, we can calculate the surface interaction energy. The model is suitable for the prediction of forces due to capillary condensation and molecular interactions.

This paper presents a comprehensive review of the reliability issues hampering capacitive RF MEMS switches in their development toward commercialization. Dielectric charging and its effects on device behavior are extensively addressed, as well as the application of different dielectric materials, improvements in the mechanical design and the use of advanced actuation waveforms. It is concluded that viable capacitive RF MEMS switches with a great chance of market acceptance preferably have no actuation voltage across a dielectric at all, contrary to the ‘standard’ geometry. This is substantiated by the reliability data of a number of dielectric-less MEMS switch designs. However, a dielectric can be used for the signal itself, resulting in a higher Con/Coff ratio than that one would be able to achieve in a switch without any dielectric. The other reliability issues of these devices are also covered, such as creep, RF-power-related failures and packaging reliability. This paper concludes with a recipe for a conceptual ‘ideal’ switch from a reliability point of view, based on the lessons learned.

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Scanning probe microscopy is at the verge of revolutionizing microscopy once again. Video-rate scanning tunneling microscope (STM) and video-rate atomic force microscope (AFM) technology will enable the direct observation of many dynamic processes that are impossible to observe today, such as atom or molecule diffusion, real time film growth, or catalytic reactions. In this paper we discuss the critical aspects that have to be taken into account when working on increasing the imaging speed of scanning probe microscopes. We highlight the state-of-the-art developments in the control of the piezoelectric scanning elements and describe the latest innovations regarding the design and construction of the whole mechanical loop including new scanner geometries. We identify critical aspects for which no obvious solution exists and aspects where advanced control engineering can help, like piezo non-linearities, the acceleration limit and the challenging technical requirements for the preamplifiers that are needed for measuring a tunneling current. Finally, we provide an overview of a number of new directions that are being pursued to solve the problems currently encountered in scanning probe technology.

In the paper, the hardness of silicon is wrongly stated as 850 kg mm2, where this should read 8500 kg mm2. In addition, the typical standard deviation of the distribution of the summit heights in the Greenwood–Williamson model has been overestimated, and should read about 1 nm instead of 3 nm. The result is that the calculated plasticity index becomes smaller, and hence the paper overestimates the amount of plastic deformation that occurs in silicon MEMS contacting surfaces. The value of the plasticity index with the new numbers becomes now 2.6 instead of the 22 reported in the original paper. This is fairly close to 1.0 which is the lower limit of `mainly plastic deformation'. The remark that for a true understanding of the deformation mode at the contact interface one should employ computer modeling as in [23] is therefore really important.

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