Experimental characterization of stiction due to charging in RF MEMS

Spengen, W. Merlijn van; Puers, Robert; Mertens, R.; Wolf, Ingrid De

doi:10.1109/iedm.2002.1175982

Cited by 49 publications

(36 citation statements)

References 2 publications

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“…5(c) and 9) of the R-C circuits with long settling times. Using (8) and (9), the charge injection under square waves for certain stress period can be calculated iteratively. Within each operating cycle, the injected charge can be calculated at the end of the on time resulting in an envelope of the charging/discharging transient, as shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

A transient SPICE model for dielectric-charging effects in RF MEMS capacitive switches

Yuan

Peng

Hwang

et al. 2006

IEEE Trans. Electron Devices

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Abstract-A transient simulation program with integrated circuit emphasis (SPICE) model for dielectric-charging effects in RF microelectromechanical system (MEMS) capacitive switches was developed and implemented in a popular microwave circuit simulator. In this implementation, the dielectric-charging effects are represented by R-C subcircuits with the subcircuit parameters extracted from directly measured charging and discharging currents in the picoampere range. The resulted model was used to simulate the actuation-voltage shift in switches due to repeated operation and dielectric charging. Agreement was obtained between the simulated and measured actuation-voltage shift under various control waveforms. For RF MEMS capacitive switches that fail mainly due to dielectric charging, the present SPICE model can be used to design control waveforms that can either prolong lifetime or accelerate failure.

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Section: Discussionmentioning

confidence: 99%

A transient SPICE model for dielectric-charging effects in RF MEMS capacitive switches

Yuan

Peng

Hwang

et al. 2006

IEEE Trans. Electron Devices

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“…The bridge resistance can be ignored in the bandwidth calculations of each switch. These boundary frequencies are denoted as f L (or ω L ) and f H (or ω H ), and they can be solved for |S 21 | lower than 1/T (in decimal), as shown in the following equations:…”

Section: Bandwidth Of a Shunt Switchmentioning

confidence: 99%

Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

Topallı¹,

Ünlü²,

Atasoy³

et al. 2009

PIER

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Abstract-This paper presents a substrate independent empirical formulation for the bridge inductance of inductively tuned RF MEMS shunt switches, allowing a systematic design approach to tune their isolation bands. Inductive tuning of RF MEMS switches is achieved by inserting recesses in the ground plane and meanders to the bridges, allowing the tuning of the isolation band of the switch from the X-band to the mm-wave band. The bridge inductance is first extracted from parametric EM simulations of the RF MEMS shunt switches and then fitted to the proposed formulations using empirical coefficients. The accuracy of the formulations is verified with the measurements on the switches that are fabricated using an in-house surface micromachining RF MEMS process on a 500-µm thick glass substrate. Measurement results verify that the bridge inductances can be determined by the provided empirical formulation.

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“…The concept of total actuation time to failure is proposed by van Spengen et al in [83]. When the RF-MEMS switch is in contact-state, charging continuously takes place under the influence of actuation voltage.…”

Section: Dielectric Charge Characterization and Drift Of Device Perfomentioning

confidence: 99%

“…It is the actuation time that determines the accumulated charging amount. The total actuation time to failure is the time it takes to attain the critical amount of charge which induces failure [83,84]. The number of cycles to failure may differ widely depending on the actuation waveform, but the total time to failure keeps the same [83].…”

Section: Dielectric Charge Characterization and Drift Of Device Perfomentioning

confidence: 99%

“…The total actuation time to failure is the time it takes to attain the critical amount of charge which induces failure [83,84]. The number of cycles to failure may differ widely depending on the actuation waveform, but the total time to failure keeps the same [83]. A simple stretched exponential for charging is used in models to predict the time to failure [85][86][87].…”

Section: Dielectric Charge Characterization and Drift Of Device Perfomentioning

confidence: 99%

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Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

Wang¹

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Experimental characterization of stiction due to charging in RF MEMS

Cited by 49 publications

References 2 publications

A transient SPICE model for dielectric-charging effects in RF MEMS capacitive switches

A transient SPICE model for dielectric-charging effects in RF MEMS capacitive switches

Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

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