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Reliability issues currently hamper the commercialization of capacitive RF MEMS switches. The most important failure mode is parasitic charging of the dielectric of such devices. In this paper we present an improved analytical model that enables us to calculate and understand the effect of insulator charging on the behavior of capacitive RF MEMS switches, and to describe the way they fail, and their reliability. Emphasis is placed on a shift of the pull-out voltage to predict failures. Tests with capacitive RF MEMS switches have been performed that validate the most important features of the model.

Band-gap narrowing of GaAs as a function of doping concentration has been measured using photoluminescence spectroscopy on samples grown by molecular beam epitaxy. Both n- (Si) and p- (Be) doped samples with concentrations varying from 3×1017 to 3×1018 cm−3 have been measured. The experimental results obtained from a line-shape analysis of the spectra taking tailing effects into account are in good agreement with recent theoretical calculations. A simple expression for the band-gap narrowing as a function of concentration for both n-and p-doped GaAs is given.

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