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Nanoscaled interdigitated electrode arrays were made with Deep U.V. lithography. Electrode widths and spacings from 500 nm down to 250 nm were achieved on large active areas (OS mm x 1 mm). These electrodes allow for the detection of affinity binding of biomolecular structures (e.g. antigens, DNA) by impedimetric measurements. Such sensor is developed, theoretically analyzed, experimentally characterized, and will be demonstrated as an affinity biosensor.

The quality of low-temperature ( 400 C) atmospheric pressure chemical vapor deposited (APCVD) silicon dioxide (SiO 2 ) films has been improved by a short time rapid thermal annealing (RTA) step. The RTA step followed by a low temperature (400 C) forming gas anneal (FGA) results in a well-passivated Si-SiO 2 interface, comparable to thermally grown conventional oxides. Efficient and stable surface passivation is obtained by this technique on virgin silicon as well as on photovoltaic devices with diffused (n + + + p) emitter surface while maintaining a very low thermal budget. Device parameters are improved by this APCVD/RTA/FGA passivation process.

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