Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

Topallı, Kağan; Ünlü, Mehmet; Atasoy, Halil İbrahim; Demır, Şımşek; Çivi, Özlem Aydın; Akın, Tayfun

doi:10.2528/pier09092502

Cited by 21 publications

(12 citation statements)

References 23 publications

(29 reference statements)

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“…Bias circuits can readily be implemented using high resistivity lines with minimal effects on array performance. Interested readers about biasing methods of RF MEMS can refer to [38,49,53]. …”

Section: Discussionmentioning

confidence: 99%

A Novel Bandwidth Enhancement Technique for X-Band Rf Mems Actuated Reconfigurable Reflectarray

Ra’di¹,

Nikmehr²,

Poorziad³

2011

PIER

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Abstract-In this paper, a wideband microstrip antenna for Xband (8.2 GHz-12.4 GHz) applications is introduced. First, simple patch antennas are studied, and a narrowband reflectarray antenna is designed. The resultant design demonstrates better performance than the previously published narrowband microstrip reflectarray antennas. The important features of the employed elements are simple structure, linear operation, and use of Radio Frequency Micro Electro Mechanical Systems (RF MEMS) switches for programmable pattern control. Next, employing our novel method, the designed narrowband structure is converted to broadband reflectarray antenna that can cover the whole X band. This novel idea is based on introducing several ground plane slots and controlling their electrical lengths by RF MEMS switches. By means of this method, 952 and 587 degree phase swing are achieved for continuous and discrete slot length variations, respectively. Application of this method along with smaller switches results in phase swing improvement of up to 1616 degree. In all structures a RT duroid (5880) substrate is selected to lower the back radiation. The achieved return loss in all cases is less than 0.32 dB. In comparison with the previous publications, our novel bandwidth enhancement technique has more generalization capability and results in single layered broadband reconfigurable microstrip reflectarray antennas with linear phase swing, lower cost, and ease of RF MEMS implementation.

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Section: Discussionmentioning

confidence: 99%

A Novel Bandwidth Enhancement Technique for X-Band Rf Mems Actuated Reconfigurable Reflectarray

Ra’di¹,

Nikmehr²,

Poorziad³

2011

PIER

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“…Although, increasing the capacitor decreases the LC resonant frequency, this will require a large area. Therefore, MEMS switch should have a high capacitance ratio and this increases the actuation voltage [5].…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

Mafinejad

Zarghami²,

Kouzani

et al. 2013

IEICE Electron. Express

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This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S 21 and S 11 are less than À10 dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. V pull-in and V pull-out of this switch are 8.1 V and 0.3 V, respectively.

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“…(2) Where G is the initial gap between the electrodes, Td is the thickness of the dielectric layer, ε a and ε b are the relative permittivities of air and dielectric material, respectively. Mechanical restoring force needed to pull up the beam can be defined by Hooke's law [14] and is represented in equation (3). (3) Where K is the spring constant in N/m.…”

Section: Analytical Modelling and Geometric Dimensinsmentioning

confidence: 99%

“…MEMS switch can be series or cantilever type and shunt or fixed-fixed type depending on path length of the signal. However, shunt switch is more beneficial as it involves optimum parasitic element and can also handle more power compared to series switches [3][4][5][6][7][8]. A general structure of fixed-fixed MEMS switch with bottom central line and top bridge is depicted in Fig.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch

Saha¹,

Maity²,

Devi³

et al. 2016

Transactions on Electrical and Electronic Materials

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Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.

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Empirical Formulation of Bridge Inductance in Inductively Tuned Rf Mems Shunt Switches

Cited by 21 publications

References 23 publications

A Novel Bandwidth Enhancement Technique for X-Band Rf Mems Actuated Reconfigurable Reflectarray

A Novel Bandwidth Enhancement Technique for X-Band Rf Mems Actuated Reconfigurable Reflectarray

Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch

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