Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)—a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured—as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.
Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.
Merging two state-of-the-art surface research techniques, in particular, atomic force microscopy (AFM) and scanning electron microscopy (SEM), within a single system is providing novel capabilities like direct visual feedback and life-monitoring of tip-induced nanoscale interactions. In addition, the combination of AFM and SEM accelerates nanoscale characterization and metrology development. Here, the concept and first results of a novel AFM-integration into a high resolution scanning electron microscope and focused ion beam system for nanoscale characterization is presented. In this context, a six-axis AFM system using self-sensing thermomechanically transduced active cantilever was developed and integrated. The design of the developed AFM-integration is described and its performance is demonstrated. Results from combined examinations applying fast AFM-methods and SEM-image fusion, AFM-SEM combined metrology verification, and three dimensional-visualization are shown. Simultaneous operation of SEM and AFM provides a fast navigation combined with sub-10 nm topographic image acquisition. Metrology application scenarios of combined studies are discussed, for example of MoS2 and diverse metrological test structures.
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