Pattern-generation and pattern-transfer for single-digit nano devices

Abstract

Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

“…The wafer is fixed to the temperature-adjusted lower electrode with the substrate temperature being -120°C. The anisotropic etching behavior of this recipe was demonstrated in a previous publication 1 .…”

“…Fabrication of devices with single digit nanometer dimensions requires high resolution, reproducible lithography, high precision positioning of patterns with respect to predefined structures, high fidelity pattern transfer to preserve the nano-sized features and metrology for the nanometer scale. These issues can be addressed by using Field-Emission Scanning Probe Lithography (FE-SPL) with self-actuating and self-sensing cantilevers combined with cryogenic reactive ion etching (cRIE) 1 . FE-SPL, on the one hand, provides pattern generation with nanometer precision, pattern overlay alignment, critical dimension (CD) measurement and inspection (imaging).…”

Near-Field IR Orientational Spectroscopy of Silk

“…Nanofabrication with a resolution of few nanometers has now become common using electron emission [1] and thermal probes [2,3]. Structuring of materials with nanoscale precision requires equally matching or better characterisation capabilities.…”

Near-Field IR Orientational Spectroscopy of Silk

“…Nanofabrication with few nanometers resolution now become routine using electron emission [1] and thermal probes [2,3]. Structuring of materials with nanoscale precision requires an equally matching characterisation capabilities.…”