Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Kaestner, Marcus; Aydogan, Cemal; Ivanov, Tzvetan; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Krivoshapkina, Yana; Höfer, Michael; Lenk, Steve; Atanasov, Ivaylo; Holz, Mathias; Rangelow, Ivo W.

doi:10.1117/1.jmm.14.3.031202

Cited by 31 publications

(17 citation statements)

References 38 publications

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“…beams. An active (self-sensing and self-actuated) cantilever was used for FE-SPL [40,41], enabling atomic force microscopy (AFM) to be employed for both alignment and inspection [42,43]. The FE-SPL was undertaken using a thermomechanically actuated, piezoresistive cantilever technology [44].…”

mentioning

confidence: 99%

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Durrani

Jones

Abualnaja

et al. 2018

Journal of Applied Physics

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Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors, based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (~2 eV) potential well allows electron confinement at RT. Our transistors use ~10 nm size scale Si/SiO2/Si pointcontact tunnel junctions, defined by scanning probe lithography and geometric oxidation.'Coulomb diamond' charge stability plots are measured at 290 K, with QD addition energy ~0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation ~2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunnelling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined.

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mentioning

confidence: 99%

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Durrani

Jones

Abualnaja

et al. 2018

Journal of Applied Physics

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“…Furthermore, we were able to generate templates with FE-SPL. These templates can be used for the production of high fidelity structures by nanoimprint lithography, enabling a high-throughput, high-resolution fabrication chain for future nanoelectronic devices like quantum dots and single electron devices [37].…”

Section: Resultsmentioning

confidence: 99%

Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Hofmann¹

2018

NANO

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High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask-and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.

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“…In frame of our research on FE-SPL, we demonstrated: (1) a closed-loop lithography for generation of lithographic features in positive, negative as well as in dual tone; 12,18,50 (2) a novel self-development mode, wherein the resist material is directly removed, which avoids development-related problems; 17,18,48,49 (3) sub-10 nm lithographic resolution capabilities; 17,18 (4) step-and-repeat, multistep, and multilayer lithography by incorporation of probe-based high accuracy alignment; 18,19 (5) applicability of novel molecular glass resists and coevaporated resist material systems; 51,52 (6) patterning of 2D-materials, e.g., MoS 2 nanoribbons with 15 nm lateral confinement; (7) pattern transfer capability of FE-SPL defined features by plasma etching at cryogenic temperatures. 29,53 As a main result, the developed technology chain has demonstrated its capability by successful fabrication of roomtemperature single electron transistor (SET) devices showing effective quantum dot sizes of less than 2 nm.…”

Section: E Field Emission Scanning Probe Lithographymentioning

confidence: 99%

“…Due to the versatile maskless patterning possibilities for sub-10 nm resolution, at relatively low cost, numerous tip-based nanofabrication methods have been developed in the last 30 years. 16 For instance, field emission scanning probe lithography (FE-SPL), emerged from our group, is a very promising candidate offering routinely a resolution below 10 nm, 17,18 an overlay accuracy below 1 nm, 19 and relatively low equipment costs. 17,18 Moreover, scanning probes provide a multi-nano-toolbox for closed-loop lithography, which incorporates ultrahigh overlay alignment, in situ inspection and analysis capabilities as well as respective feature functionalization.…”

Section: Introductionmentioning

confidence: 99%

“…16 For instance, field emission scanning probe lithography (FE-SPL), emerged from our group, is a very promising candidate offering routinely a resolution below 10 nm, 17,18 an overlay accuracy below 1 nm, 19 and relatively low equipment costs. 17,18 Moreover, scanning probes provide a multi-nano-toolbox for closed-loop lithography, which incorporates ultrahigh overlay alignment, in situ inspection and analysis capabilities as well as respective feature functionalization. In this term, FE-SPL is suited for rapid nanoscale prototyping, fabrication of 1:1 masks for nanoimprint lithography (NIL), or creation of property-defining nanodevice features at the single digit level.…”

Section: Introductionmentioning

confidence: 99%

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Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

Rangelow

Ivanov

Ahmad

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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With the recent advances in the field of nanotechnology, measurement and manipulation requirements at the nanoscale have become more stringent than ever before. In atomic force microscopy, high-speed performance alone is not sufficient without considerations of other aspects of the measurement task, such as the feature aspect ratio, required range, or acceptable probe-sample interaction forces. In this paper, the authors discuss these requirements and the research directions that provide the highest potential in meeting them. The authors elaborate on the efforts toward the downsizing of self-sensed and self-actuated probes as well as on upscaling by active cantilever arrays. The authors present the fabrication process of active probes along with the tip customizations carried out targeting specific application fields. As promising application in scope of nanofabrication, field emission scanning probe lithography is introduced. The authors further discuss their control and design approach. Here, microactuators, e.g., multilayer microcantilevers, and macroactuators, e.g., flexure scanners, are combined in order to simultaneously meet both the range and speed requirements of a new generation of scanning probe microscopes.

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Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Cited by 31 publications

References 38 publications

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

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