The influence of deep level defects (DLs) on the conversion efficiency of
multicrystalline Si-based standard solar cells (SCs) is investigated.
Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200
μm thickness were used for SCs preparation. Three types of SCs with
conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance
voltage characteristics method (C-V) and by current deep level transient
spectroscopy (I-DLTS). The correlation between the total concentration of DLs
and the values of the SCs conversion efficiency is found.
The influence of deep level defects lateral distribution in active layers of multicrystalline Si-based standard solar cells is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. One type of solar cells with conversion efficiency 20.4% was studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). From various places along the diagonal of solar cell’s substrate with 20.4% efficiency nine pieces with an area ∼20 mm2 were extracted and studied. I-DLTS spectra of the five pieces from solar cell were measured. The features of deep levels defects concentration lateral distribution along the SC’s surface were studied.
Measuring complex for analysis of recombination deep traps in semiconductor solar cells based on the I-DLTS is described. Measuring complex can be used in the industry of semiconductor solar cells where is necessary to control deep traps concentration and required level of conversion efficiency and quality of solar cells.
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