Study of Deep Levels in a HIT Solar Cell

Vikhrov, S. P.; Vishnyakov, N. V.; Gudzev, V. V.; Ermachikhin, A. V.; Shilina, D. V.; Litvinov, V. G.; Maslov, A. D.; Mishustin, V. G.; Теруков, Е. И.; Titov, A. S.

doi:10.1134/s1063782618070254

Cited by 4 publications

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“…For the investigation, we selected productionquality structures based on an a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/a-Si:H(p + ) junction [14]. The choice of the type of layers in the solar cells introduced features into the structure of the contacts: the use of amorphous silicon with p-type conductivity led to a smaller gap between the current-collector contacts on the SC back side.…”

Section: Methodsmentioning

confidence: 99%

External Quantum Efficiency of Bifacial HIT Solar Cells

et al. 2020

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It is shown that the use of both sides of solar cells created with the heterojunction technology makes possible an increase in the solar-cell efficiency. The difference in illumination of the front and back sides is associated with transformation of the blue part of the spectrum, which is shown by the example of the spectral dispersion of the quantum efficiency. The average difference between the quantum efficiency for both sides is ~11%. The short-circuit current density with the power of the solar spectrum at sea level from 400 to 1100 nm is 36.3 mA/cm 2 for the front side and 32.7 mA/cm 2 for the back side. The decrease amounts to 9.7%.

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Section: Methodsmentioning

confidence: 99%

External Quantum Efficiency of Bifacial HIT Solar Cells

et al. 2020

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“…The built-in layer of amorphous conduction silicon is used in the HIT photocell for passivation of heterojunction defects, however, the presence of this layer leads to undesirable consequences for the photocell, namely, due to the qualities of the amorphous material itself, there is a drop in the diffusion length of charge carriers in the section and, as a result, a decrease in the efficiency of the photocell. One of the possibilities for further improving the efficiency of a heterojunction silicon solar cell is to increase the length of the diffusion path of charge carriers in the region of the heterojunction [1,12,13,14].…”

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confidence: 99%

Comparativeanalysisoffacedetectorshaar, Hog, CNN

Chuchvaga

Titov

Tokmoldin

et al. 2021

SPM

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This work presented in this publication is a continuation of works [1] and [2]. We have shown that in solar cells of the HIT structure, when the thickness of the embedded amorphous layer increases, the efficiency of the solar cell increases, but to a certain point of maximum. The increase in characteristics is due to an increase in the lifetime of non-basic charge carriers in a crystalline silicon substrate. This behaviour of the system can be explained by better passivation of surface States on the silicon substrate. The decrease in the efficiency of the solar cell after reaching the maximum is due to the increase of the resistance structure, which with a point contributes more to the characteristics of the solar cell than the contribution from the passivation of surface states. Using the PECVD method, amorphous silicon films with a thickness of 7, 30 and 50 nm were grown on a single-crystal commercial silicon substrate on both sides. Then, the lifetime of non-basic charge carriers was measured using the contactless Sinton method on these structures. Further, the samples were examined by photoluminescence at room temperature. Using this method, it was possible to obtain the dependence of the concentration of non-equilibrium charge carriers on the intensity of photoluminescence radiation. These dependences showed that the intensity is lower on samples with a lower thickness of amorphous silicon than in samples with a higher thickness of the amorphous layer. The detailed results of this work were first presented by the corresponding author in his dissertation [3], the theses of the work were presented at the conference of young scientists of KazNU [4] and only now the results are published as a full-fledged article in the journal.

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Investigation of HIT solar cells low frequency noise characteristics

Ermachikhin

Vorobyov

Trusov

et al. 2021

J. Phys.: Conf. Ser.

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The effect of solar cell fragment annealing on its noise characteristics is shown. The calculated difference in relaxation times arising from the change in noise after annealing was 30%. Measurements of noise characteristics in the dark and under illumination with a red laser with different radiation power were carried out. Close to linear dependences of noise power reduction with increasing radiation power were obtained.

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Study of Deep Levels in a HIT Solar Cell

Cited by 4 publications

References 4 publications

External Quantum Efficiency of Bifacial HIT Solar Cells

External Quantum Efficiency of Bifacial HIT Solar Cells

Comparativeanalysisoffacedetectorshaar, Hog, CNN

Investigation of HIT solar cells low frequency noise characteristics

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