2017
DOI: 10.1557/adv.2017.376
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of Deep-Level Defects Lateral Distribution in Active Layers of Multicrystalline Silicon Solar Cells

Abstract: The influence of deep level defects lateral distribution in active layers of multicrystalline Si-based standard solar cells is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. One type of solar cells with conversion efficiency 20.4% was studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). From various places along the diagonal of solar cell’s substrate with 20.4% ef… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 3 publications
0
1
0
Order By: Relevance
“…The C-V measurements were performed in the frequency range of 2 kHz–2 MHz. All measurements were done in automatic mode, implemented using the LabVIEW engineering graphic programming environment [ 32 ].…”
Section: Methodsmentioning
confidence: 99%
“…The C-V measurements were performed in the frequency range of 2 kHz–2 MHz. All measurements were done in automatic mode, implemented using the LabVIEW engineering graphic programming environment [ 32 ].…”
Section: Methodsmentioning
confidence: 99%