Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Sibased Solar Cells

Abstract

The influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

Current Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching

“…The spectrum contains DL H1 peak with an activation energy E t = 0.46 eV, which was determined on the basis of inclination of Arrhenius line. The concentration of the traps with DL H1, determined on the peak height in accordance with the method proposed in [19], was 1.37 • 10 16 cm −3 . On the I-DLTS spectrum from the low temperature side, there is a broadened " shoulder" in the temperature range 130−205 K, the position of which is almost independent of the time constant τ (Fig.…”

Дефекты С Глубокими Уровнями В Полупроводниковой Структуре Фотоэлектрического Преобразователя Солнечной Энергии С Антиотражающей Пленкой Пористого Кремния

“…Анализ сигнала релаксации тока осуществлялся с помощью весовой функции " lock-in". Величины энергии активации ГУ E t определялись по сдвигу максимумов CDLTS-спектров, измеренных при разных значениях постоянной времени [5]. Концентрация ГУ N t определялась по высоте пиков СDLTS-спектров [5].…”