A method for the growth of high‐quality gallium oxide (β‐Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid‐solution oxides (AlxGa1–x)2O3 is tested.
Bulk (Al
x
Ga1-x
)2O3 crystals with an Al fraction x in the range from 0.0 to 0.23 were successfully grown by the Czochralski method. An increase in the band gap from 4.7 eV to 5.1 eV with the rise of the Al content was demonstrated by analyzing optical transmission spectra. The crystal quality of the obtained samples was controlled by X-ray diffractometry. The appearance of crystal`s mosaic blockness was found for the Al fraction x above 0.05.
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