On improving the radiation resistance of gallium oxide for space applications

Bauman, D. A.; Borodkin, A. I.; Petrenko, A.A.; Panov, D.I.; Kremleva, A. V.; Spiridonov, V. A.; Zakgeim, D. A.; Silnikov, М.V.; Odnoblyudov, M. A.; Романов, А. Е.; Bougrov, V. E.

doi:10.1016/j.actaastro.2020.12.010

Cited by 20 publications

(12 citation statements)

References 27 publications

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“…As we have already noted earlier, the large bandgap is one of the main advantages of gallium oxide, which determines the prospects for its application in power electronics. In addition, it is known that an increase in the bandgap leads to an increase in the radiation resistance of the material, [ 24 ] which makes it possible to use devices based on it in space and nuclear applications. One of the ways to further increase the bandgap is to introduce Al into the β‐Ga 2 O 3 composition.…”

Section: Resultsmentioning

confidence: 99%

High‐Quality Bulk β‐Ga₂O₃ and β‐(Al_xGa_1−x)₂O₃ Crystals: Growth and Properties

Bauman

Panov

Zakgeim

et al. 2021

Physica Status Solidi (a)

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A method for the growth of high‐quality gallium oxide (β‐Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid‐solution oxides (AlxGa1–x)2O3 is tested.

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Section: Resultsmentioning

confidence: 99%

High‐Quality Bulk β‐Ga₂O₃ and β‐(Al_xGa_1−x)₂O₃ Crystals: Growth and Properties

Bauman

Panov

Zakgeim

et al. 2021

Physica Status Solidi (a)

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“…[17] The external object may take many forms, neutrons, electrons, protons, energy waves, ions, etc., and occurs in many environments. Space exploration, solar photodetectors, [18][19][20][21][22] nuclear reactor power generation, and strategic events represent popular circumstances where ionizing radiation threatens the proper function of microelectronic devices. [23][24][25][26][27][28] As the radiation deposits energy along its path through the material, energy can transfer to native atoms, causing the generation of free electrons.…”

Section: Introductionmentioning

confidence: 99%

Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

Goodman¹,

McHenry

Titus³

et al. 2022

Physica Status Solidi (a)

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For utilization in environments where radiation causes concern, a material's photogeneration coefficient proves essential for device designers. To extract this parameter for gallium oxide, which exhibits higher breakdown voltage characteristics compared with other commonly used semiconductor materials, making it desirable for high‐power applications, Schottky diodes receive high‐dose‐rate radiation from an electron linear accelerator. Monitoring photogenerated charge versus dose rate reveals a photogeneration coefficient of 2.4 × 1015 pairs (cm−3‐rad(Si)−1) for epitaxially grown β‐phase gallium oxide.

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“…Gallium nitride (GaN) and its related alloys such as AlxGa1-xN and InxGa1-xN are widely used in the ultraviolet (UV) and visible spectrum regions, especially as the active region of photodetectors (PD) 1 . III-nitride-based PDs are particularly commonly used in harsh environments such as space applications 2,3 Meanwhile, the wide bandgap (3.4 eV 2 ), high breakdown voltage 4 , thermal and chemical stability, and irradiation resistance introduce GaN as a suitable candidate to use in harsh and irradiated environments. 5,6 Exposure of the GaN layers with electromagnetic irradiation and/or high-energy particles has been shown to lead to the vacancy generation and defects in the crystal structure such as Ga and/or N atoms displacements from their respective lattice sites 7 .…”

Section: Introductionmentioning

confidence: 99%

The effect of low dose γ-irradiation on the optoelectric properties of n-GaN based MSM structure

Barghamadi

Alam

Ghafari

et al. 2021

Preprint

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The room temperature effect of a low dose rate (10-4 rad (Si)/s) 60 Co γ-irradiation on the structural propertiesand dark current of the GaN-based metal-semiconductor-metal (MSM) structure has been studied. In contrast to previous studies, a non-monotonous dependence of the dark current with the γ-irradiation dose is observed. The intensity and linewidth of the photoluminescence (PL) peaks correlate with the changes in electrical characteristics and eventually degrade after prolonged exposure to the γ-radiation. The abnormal behavior of the MSM structure and particularly its I-V and PL characteristics are explained by considering the carrier transfer mechanism in the localized states. These phenomena are associated with the decrease of shallow donors’ density in localized states and the activation of the non-radiative centers as radiation dose increases. These experimental results and the mechanism presented are essential for understanding the interaction of the γ-irradiation with n-GaN and for estimation of reliability of GaN-based (opto)electronics in harsh conditions of γ-radiation (space applications, liquidation of consequences of technogenic catastrophes, etc.).

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On improving the radiation resistance of gallium oxide for space applications

Cited by 20 publications

References 27 publications

High‐Quality Bulk β‐Ga₂O₃ and β‐(Al_xGa_1−x)₂O₃ Crystals: Growth and Properties

High‐Quality Bulk β‐Ga₂O₃ and β‐(Al_xGa_1−x)₂O₃ Crystals: Growth and Properties

Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

The effect of low dose γ-irradiation on the optoelectric properties of n-GaN based MSM structure

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On improving the radiation resistance of gallium oxide for space applications

Cited by 20 publications

References 27 publications

High‐Quality Bulk β‐Ga2O3 and β‐(AlxGa1−x)2O3 Crystals: Growth and Properties

High‐Quality Bulk β‐Ga2O3 and β‐(AlxGa1−x)2O3 Crystals: Growth and Properties

Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

The effect of low dose γ-irradiation on the optoelectric properties of n-GaN based MSM structure

Contact Info

Product

Resources

About

High‐Quality Bulk β‐Ga₂O₃ and β‐(Al_xGa_1−x)₂O₃ Crystals: Growth and Properties

High‐Quality Bulk β‐Ga₂O₃ and β‐(Al_xGa_1−x)₂O₃ Crystals: Growth and Properties