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A method for the growth of high‐quality gallium oxide (β‐Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid‐solution oxides (AlxGa1–x)2O3 is tested.

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The paper presents the study results of the semiconductor laser active medium temperature effect, that changes in time during its operation, on its output spectral characteristics. Experimental dependences of the diode laser emission spectra on the laser crystal temperature in the range from 296 to 320 K are investigated. Using a heat fluxes computer model the possible reasons were analyzed for the time variation of the laser diode module spectral characteristics with several single emitters that are fixed on the ladder platform. The obtained results can be used for the large-scale laser diode modules design, including a large number of emitters, with high requirements for the output characteristics stability. Thermal fields and isothermal surfaces for a laser diode module with total thermal loads exceeding 30 W are studied.

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