In this paper, we report on the results of experimental and theoretical study of a promising way for suppression of the efficiency droop with current in InGaN-based light emitting diodes. Simulations carried out using a drift-diffusion approach with quantum-mechanical corrections clearly show that nonradiative Auger recombination is the principal mechanism limiting the device performance at high-injection level. New design of LED heterostructure with short-period superlattice in the active region is proposed and assessed theoretically. Experimentally, the implementation of the structure design in high-power devices has resulted in substantial suppression of the efficiency droop compared to conventional multiquantumwell InGaN LEDs.
A method for the growth of high‐quality gallium oxide (β‐Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid‐solution oxides (AlxGa1–x)2O3 is tested.
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