Volume Gallium Oxide Crystals Grown from Melt by the Czochralski Method in an Oxygen-Containing Atmosphere

High‐Quality Bulk β‐Ga2O3 and β‐(AlxGa1−x)2O3 Crystals: Growth and Properties

“…To solve this problem, it is necessary to add a certain amount of oxygen to the atmosphere of the growth zone. [ 17–19 ] This leads to an increase in the partial pressure of oxygen and, as a consequence, the suppression of oxygen release from the melt. In contrast, the appearance of oxygen in the growth zone at growth temperatures (above 1750 °C) leads to rapid oxidation and failure of the tooling elements, primarily the crucible.…”

Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

“…The crystals were pulled out on a sapphire seed in argon atmosphere Ar -95% and oxygen O 2 -5% at pressure ∼ 1 bar. Details of the technological process were described by us earlier in [14,15]. The grown crystals had a cylindrical shape with a diameter ∼ 20 mm and length ∼ 15 mm.…”

High-quality β-(AlxGa1−x)2O3 thin films on sapphire substrates by face-to-face annealing

“…(Al x Ga 1−x ) 2 O 3 presents an even wider bandgap (4.9-8.8 eV) as compared to Ga 2 O 3 , which makes it attractive for versatile applications like power devices and far-ultraviolet optoelectronic detectors. 1,2 To achieve high-quality (Al x Ga 1−x ) 2 -O 3 thin films, various deposition techniques, 3 such as mist chemical vapor deposition (mist-CVD), [4][5][6] molecular beam epitaxy (MBE), 7,8 pulsed laser deposition (PLD), 9 and metalorganic chemical vapor deposition (MOCVD), 10,11 have been extensively explored to grow (Al x Ga 1−x ) 2 O 3 thin films, the quality of which still requires further improvement.…”