High-quality β-(Al_xGa_1−x)₂O₃ thin films on sapphire substrates by face-to-face annealing

Abstract

High-quality β-(AlxGa1-x)2O3 thin film is fabricated through a face-to-face annealing on sapphire substrate covered by epitaxial Ga2O3. Al atoms during the high-temperature annealing are uniformly diffused from the sapphire substrate...