Charge Carrier Traps in a Bulk Gallium Oxide β-Ga2O3

Иванова, Э. В.; Dementev, P. A.; Zamoryanskaya, M. V.; Zakgeim, D. A.; Panov, D. Yu.; Spiridonov, V. A.; Kremleva, A. V.; Odnoblyudov, M. A.; Bauman, D. A.; Романов, А. Е.; Bugrov, V. E.

doi:10.1134/s1063783421040089

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…A number of experiments on the crystal growing [17] were carried out and the inhomogeneity of their cathodoluminscescence was studied. For further experiments the sample with the most inhomogeneous luminescence was selected.…”

Section: Resultsmentioning

confidence: 99%

Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

et al. 2022

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This work is devoted to the study of the luminescence inhomogeneity nature of bulk (GaxAl1-x)2O3 samples grown by the Czochralski method. In the study of sample cleavages by the local cathodoluminescence method, regions with different luminescence were observed. To determine the cathodoluminescence contrast nature, we studied the uniformity of the aluminum distribution, the surface topography, and compared the luminescence spectra and the kinetics of emission bands for different regions of the sample. Also, to determine the luminescence bands nature, the crystal was annealed in air at 1000oC. This made it possible to observe the change in luminescence for the same region of the sample. Based on the studies performed, it was concluded that inhomogeneous luminescence is associated with the distribution of point defects. Upon annealing in air, the transformation of nonradiative recombination centers into luminescent centers was observed. Keywords: gallium oxide, luminescence, point defects.

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Section: Resultsmentioning

confidence: 99%

Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

et al. 2022

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“…To study this process, the authors proposed a new approach, which consists of the simultaneous measurement of the intensity of cathodoluminescence and the absorbed current during continuous irradiation with an electron beam. The technique of such studies is described elsewhere. − Combining the study of the absorbed current dynamics and the CL intensity dynamic under continuous electron beam irradiation, we can conclude that there are traps and their type and concentration.…”

Section: Introductionmentioning

confidence: 99%

Determination of Type and Concentration of Traps in Nanoscale-Thick HfO₂ Films Applicable for Gate Dielectric Stacks

Dementeva,

Dementev,

Yagovkina

et al. 2023

ACS Appl. Nano Mater.

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Nanoscale-thick films, including high-k dielectrics, are an essential element of modern electronic devices (e.g., transistors based on III–V semiconductors). In this regard, the development of techniques for studying the electronic properties of such nano-objects is an important task. In this work, we propose a technique that makes it possible to determine the presence of trap levels, their concentration, and the activation energy for films up to 40 nm thick. The mechanism of charge transport in high-k dielectrics, such as HfO2, is the subject of active study. We investigated thin hafnia films grown on the Si surface with TEMAH-H2O or Hf(thd)4-O2 precursor systems. It was shown by X-ray photoemission spectroscopy that the TEMAH-H2O sample was grown with oxygen deficiency. On the Hf(thd)4-O2 sample, the SiO2 sublayer between hafnia and substrate was formed, which was confirmed by Kelvin probe microscopy and X-ray reflectivity studies. This SiO2 sublayer significantly affects the charge dissipation. Diffusion in the lateral direction along the SiO2 sublayer has a higher diffusion coefficient than in the HfO2 layer, but the presence of the SiO2 sublayer reduces the level of charge leakage to the substrate. The activation energies for hole traps and electron traps were found to be E a ≈ 0.46 ± 0.03 and 0.37 ± 0.03 eV for the TEMAH-H2O sample and E a ≈ 0.22 ± 0.05 and 0.16 ± 0.04 eV for the Hf(thd)4-O2 sample, respectively. It was also shown that the process of positive charge localization occurs faster than negative charge localization. Electron localization leads to a decrease of the intensity of the 2.65 eV CL band, associated with oxygen vacancies.

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Influence of the aluminum content on the luminescent and electronic properties of β-Ga₂O₃

Дементьева

Dementev

Kremleva

et al. 2021

J. Phys.: Conf. Ser.

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In this work, we investigated bulk β-Ga2O3 samples grown by the Czochralski method on Al2O3 and β-Ga2O3 seeds. The elemental composition of the samples and its effect on the luminescent and electrophysical properties of the samples were determined. The Kelvin probe microscopy was used to study the processes of localization and dissipation of charges in the samples. It was shown that in a β-Ga2O3 sample grown on an Al2O3 seed, the characteristic charge dissipation time is 10 times longer.

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Charge Carrier Traps in a Bulk Gallium Oxide β-Ga2O3

Cited by 3 publications

References 14 publications

Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

Determination of Type and Concentration of Traps in Nanoscale-Thick HfO₂ Films Applicable for Gate Dielectric Stacks

Influence of the aluminum content on the luminescent and electronic properties of β-Ga₂O₃

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Charge Carrier Traps in a Bulk Gallium Oxide β-Ga2O3

Cited by 3 publications

References 14 publications

Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

Luminescence features of bulk crystals β-(Ga-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-)-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

Determination of Type and Concentration of Traps in Nanoscale-Thick HfO2 Films Applicable for Gate Dielectric Stacks

Influence of the aluminum content on the luminescent and electronic properties of β-Ga2O3

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Determination of Type and Concentration of Traps in Nanoscale-Thick HfO₂ Films Applicable for Gate Dielectric Stacks

Influence of the aluminum content on the luminescent and electronic properties of β-Ga₂O₃