Influence of the aluminum content on the luminescent and electronic properties of β-Ga₂O₃

Abstract

In this work, we investigated bulk β-Ga2O3 samples grown by the Czochralski method on Al2O3 and β-Ga2O3 seeds. The elemental composition of the samples and its effect on the luminescent and electrophysical properties of the samples were determined. The Kelvin probe microscopy was used to study the processes of localization and dissipation of charges in the samples. It was shown that in a β-Ga2O3 sample grown on an Al2O3 seed, the characteristic charge dissipation time is 10 times longer.